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Número de pieza | APTGT30H60T3G | |
Descripción | IGBT Power Module | |
Fabricantes | Microsemi Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTGT30H60T3G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! APTGT30H60T3G
Full - Bridge
Trench + Field Stop IGBT®
www.datasheet4u.com Power Module
13 14
Q1 Q3
18 CR1 CR3
19
22 7
23 8
26 Q2 CR2 CR4 Q4
27
11
10
4
3
29 30
15
31 32
R1 16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
VCES = 600V
IC = 30A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
TJ = 150°C
Max ratings
600
50
30
60
±20
90
60A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page APTGT30H60T3G
www.datasheet4u.com
Operating Frequency vs Collector Current
120
100
ZCS
80 ZVS
60
V CE =300V
D=50%
RG=10Ω
TJ=150°C
Tc=85°C
40
20
0
0
Hard
switching
10
20
IC (A)
30
40
60
50
40
30
20
10
0
0
Forward Characteristic of diode
TJ=125°C
TJ=150°C
TJ=25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
3
Diode
2.5 0.9
2 0.7
1.5 0.5
1 0.3
0.5 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet APTGT30H60T3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTGT30H60T3 | IGBT Power Module | Advanced Power Technology |
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