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PDF APT35GN120BG Data sheet ( Hoja de datos )
| Número de pieza | APT35GN120BG | |
| Descripción | IGBT | |
| Fabricantes | Advanced Power Technology | |
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TYPICAL PERFORMANCE CURVES
®
AP1T2305G0NV120B(G)
APT35GN120B
APT35GN120BG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
results in superior VCE(on) performance. Easy paralleling results from very tight
parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in
gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive
design and minimizes losses.
• 1200V NPT Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 10µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
www.DataSAhpepelitc4aUtio.cnos:mWelding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
TO-247
GC E
G
C
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT35GN120B(G)
UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
94
46
105
105A @ 1200V
379
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RGINT
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
1200
5 5.8 6.5
1.4 1.7 2.1
1.9
100
TBD
600
6
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Units
Volts
µA
nA
Ω
1 page  
TYPICAL PERFORMANCE CURVES
4,000
Cies
1,000
500
100
50
C0es
Cres
10
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT35GN120B(G)
120
100
80
60
40
20
0
0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.35
0.30
www.DataSheet4U0..c25om
0.20
0.15
0.10
0.05
0
10-5
0.9
0.7
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
Junction
temp. (°C)
Power
(watts)
RC MODEL
0.163
0.168
0.00661F
0.181F
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
140
Fmax = min (fmax, fmax2)
10
fmax1
=
td(on)
+
0.05
tr + td(off)
+
tf
TTDJC===50172%55°°CC
1 VRCGE==2.820Ω0V
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
10 20 30 40 50 60 70
Figure 20, OICp,eCraOtLinLgECFTreOqRueCnUcRyRvEsNCTo(Alle) ctor Current
5 Page | ||
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