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PDF SIGC10T60 Data sheet ( Hoja de datos )
| Número de pieza | SIGC10T60 | |
| Descripción | IGBT3 Chip | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SIGC10T60 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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IGBT3 Chip
SIGC10T60
FEATURES:
• 600V Trench & Field Stop technology
• low VCE(sat)
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
This chip is used for:
• power module
• discrete components
Applications:
• drives
• white goods
• resonant applications
C
G
E
Chip Type
SIGC10T60
VCE
ICn
Die Size
600V 20A 3.19 x 3.21 mm2
Package Ordering Code
sawn on foil
Q67050-
A4283-A101
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
3.19 x 3.21
2.004 x 2.413
mm2
0.361 x 0.513
10.2 / 7.1
mm2
70 µm
150 mm
0 deg
1363 pcs
Photoimide
3200 nm AlSiCu
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD CLS, L7541A, Edition 2, 27.01.2005
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SIGC10T60.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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