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PDF APT75GN120B2 Data sheet ( Hoja de datos )
| Número de pieza | APT75GN120B2 | |
| Descripción | IGBT | |
| Fabricantes | Advanced Power Technology | |
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TYPICAL PERFORMANCE CURVES
®
1200VAPT75GN120B2_L(G)
APT75GN120B2 APT75GN120L
APT75GN120B2G* APT75GN120LG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
(B2)
T-Max®
TO-264
(L)
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT75GN120B2_L(G) UNIT
VCES
www.DataSheet4U.com
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 8 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
200
99
225
225A @ 1200V
833
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
RG(int)
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 3mA)
Gate Threshold Voltage (VCE = VGE, I C = 3mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
1200
5.0 5.8 6.5
1.4 1.7 2.1
2.0
100
TBD
600
10
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Units
Volts
µA
nA
Ω
1 page  
TYPICAL PERFORMANCE CURVES
6,000
Cies
1,000
500
Coes
Cres
100 0
10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT75GN120B2_L(G)
250
200
150
100
50
0 0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.16
0.14
D = 0.9
0.12
0.10
0.7
0.08
0.06
0.04
0.02
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
Junction
temp. (°C)
RC MODEL
0.0686
0.0139
Power
(watts)
0.0630
0.203
Case temperature. (°C)
0.0182
1.62
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
60
10 Fmax = min (fmax, fmax2)
5
fmax1
=
td(on)
+
0.05
tr + td(off)
+
tf
TTDJC===50172%55°°CC
110VRCGE==13.8000Ω0V
50
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
70 90 110 130 150
Figure 20, OICp,eCraOtLinLgECFTreOqRueCnUcRyRvEsNCTo(Alle) ctor Current
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