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PDF CM200TU-12F Data sheet ( Hoja de datos )
| Número de pieza | CM200TU-12F | |
| Descripción | Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts | |
| Fabricantes | Powerex Power Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CM200TU-12F (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200TU-12F
Trench Gate Design
Six IGBTMOD™
200 Amperes/600 Volts
S - NUTS (5 TYP)
J
K
K
CM
N
P
R
GUP EUP
GVP EVP
GWP EWP
T (4 TYP.)
P
BE
TC
MEASURING
POINT
LNLNL
M
GUN EUN
GVN EVN
GWN EWN
Q
UVW
TC
MEASURING
POINT
W - THICK x X - WIDE
TAB (12 PLACES)
C
JJ
LL
NN
D
A
L
V
W - THICK x X - WIDE
TAB (12 PLACES)
H
G
F
P
GUP
RTC
EUP
U
GVP
RTC
EVP
V
GUN
RTC
EUN
N
GVN
RTC
EVN
Outline Drawing and Circuit Diagram
GWP
RTC
EWP
W
GWN
RTC
EWN
A
Dimensions Inches
Millimeters
A 4.21 107.0
B 4.02 102.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D
3.54±0.01
90.0±0.25
E
3.15±0.01
80.0±0.25
F 0.16
4.0
G 1.02
26.0
H 0.31
8.1
J 0.91 23.0
K 0.47 12.0
L 0.43 11.0
Dimensions
M
N
P
Q
R
S
T
V
W
X
Inches
0.57
0.85
0.67
1.91
0.15
M5
0.22 Dia.
0.03
0.02
0.110
Millimeters
14.4
21.7
17.0
48.5
3.75
M5
5.5 Dia.
0.8
0.5
2.79
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200TU-12F is a
600V (VCES), 200 Ampere Six-
IGBT IGBTMOD™ Power Module.
Current Rating
Type Amperes
CM 200
VCES
Volts (x 50)
12
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CM200TU-12F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CM200TU-12F | HIGH POWER SWITCHING USE |  Mitsubishi Electric Semiconductor |
| CM200TU-12F | Trench Gate Design Six IGBTMOD 200 Amperes/600 Volts | Powerex Power Semiconductors |
| CM200TU-12H | HIGH POWER SWITCHING USE INSULATED TYPE | Mitsubishi Electric Semiconductor |
| CM200TU-12H | Six IGBTMOD 200 Amperes/600 Volts | Powerex Power Semiconductors |
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