SB2100 반도체 회로 부품 판매점
Schottky Diodes
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 Kexin |
SMD Type
Schottky Diodes
SB220 ~ SB2200
Diodes
■ Features
● Metal silicon junction,majority carrier conduction
● Low power loss,high efficiency
● High forward surge current capability
DO-214AC(SMA)
2.126
1.397
2
4.597
3.988
2.896 2.22
1 2.489 2.02
Unit: mm
4.32
4.12
5.668
4.925
2.438
1.981
2.75
2.55
5.87
5.67
Recommended
Land Pattern
1.524
0.762
0.203
0.051
0.305
0.152
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
SB
220
SB
230
SB
240
SB
250
SB
260
SB
270
SB
280
SB
290
SB
2100
SB
2150
SB
2200
Unit
Peak Repetitive Peak Reverse Voltage
RMS Reverse Voltage
DC Blocking Voltage
VRRM 20 30 40 50 60 70 80 90 100 150 200
VR(RMS) 14 21 28 35 42 49 56 63 70 105 140 V
VR 20 30 40 50 60 70 80 90 100 150 200
Average Rectified Current
IFAV
2
A
Peak Forward Surge Current @=8.3ms
IFSM
60
Forward voltage
VF 0.55
0.7
0.85 0.95 V
Reverse voltage leakage current Ta = 25℃
Ta = 100℃
IR
0.5
10
5
0.2
mA
2
Junction capacitance (Note.1)
Cj 220
80 pF
Thermal Resistance Junction to Ambient (Note.2) RθJA
50 ℃/W
Junction Temperature
Storage Temperature range
TJ -65 to 125
-65 to 150
Tstg -65 to 150
℃
Note.1: Measured at 1MHz and applied reverse voltage of 4.0V D.C.
Note.2: Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
■ Marking
NO.
Marking
SB220 SB230 SB240 SB250 SB260 SB270 SB280 SB290 SB2100 SB2150 SB2200
SB220 SB230 SB240 SB250 SB260 SB270 SB280 SB290 SB2100 SB2150 SB2200
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SMD Type
■ Typical Characterisitics
Schottky Diodes
SB220 ~ SB2200
Diodes
FIG. 1- FORWARD CURRENT DERATING CURVE
2.0
1.6
1.2
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
0.8
0.4 SB220-SB260
SB270-SB2200
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
1
0.1
0.01
0.2
0.4
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
SB220-SB240
SB250-SB260
SB270-SB2150
SB2200
0.6 0.8
1.0 1.1
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
2000
1000 SB220-SB240
SB250-SB2200
100
TJ=25 C
10
0.1
1.0 10
REVERSE VOLTAGE,VOLTS
100
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FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
60
48
36
24
12 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1 10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=100 C
1
TJ=75 C
0.1
0.01
TJ=25 C
0.001 0
20 40
60 80 100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1 1
10
t,PULSE DURATION,sec.
100
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( kexin )
SB2100 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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