DZ23C3V9 반도체 회로 부품 판매점
Dual Surface Mount Zener Diode
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 Taiwan Semiconductor |
DZ23C2V7 THRU DZ23C51
Dual Surface Mount Zener Diode
Features
Dual zeners in common cathode configuration
300 mW power dissipation
Ideally suited for automated insertion
△Vz for both diodes in one case is ≦5%
Common anode style available see AZ series
Mechanical Data
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: See diagram
Marking: Marking Code (see table on Page 2)
Mounting position: Any
Weight: 0.008 grams (approx.)
Voltage Range
2.7 to 51 Volts
300m Watts Power Dissipation
SOT-23
0.020(0.51)
0.015(0.37)
0.055(1.40) 0.098(2.50)
0.047(1.19) 0.083(2.10)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Power Dissipation (Note 1)
Pd
Thermal Resistance Junction to Ambient Air
(Note 1)
RθJA
Operating and Storage Temperature Range
TJ, TSTG
Notes: 1. Device on Fiberglass Substrate.
2. Tested with IZT Current pulses. Pulse width = 5ms.
Value
300
420
-65 to + 150
Units
mW
K/W
OC
- 790 -
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted)
Zener
Maximum
Typical
Min
Device Voltage Range Zener Impedance Temperature Reverse
Device
(Note 1)
Marking
Code
@ Izt = 5.0mA
Vz(Volts)
(Notes 2)
ZZT @ IZT
= 5.0mA
Ohms
ZZK @ IZK
= 1.0mA
Ohms
Coefficient
Tc(% /OC)
Voltage
@ IR = 0.1uA
VR(Volts)
DZ23C2V7
V1
2.5-2.9
83
500 -0.065
-
DZ23C3V0
V2
2.8-3.2
95
500 -0.060
-
DZ23C3V3
V3
3.1-3.5
95
500 -0.055
-
DZ23C3V6
V4
3.4-3.8
95
500 -0.055
-
DZ23C3V9
V5
3.7-4.1
95
500 -0.050
-
DZ23C4V3
V6
4.0-4.6
95
500 -0.035
-
DZ23C4V7
V7
4.4-5.0
78
500 -0.015
-
DZ23C5V1
V8
4.8-5.4
60
480 +0.005
0.8
DZ23C5V6
V9
5.2-6.0
40
400 +0.020
1.0
DZ23C6V2
V10
5.8-6.6
10
200 +0.030
2.0
DZ23C6V8
V11
6.4-7.2
8.0
150 +0.045
3.0
DZ23C7V5
V12
7.0-7.9
7.0
50 +0.050
5.0
DZ23C8V2
V13
7.7-8.7
7.0
50 +0.055
6.0
DZ23C9V1
V14
8.5-9.6
10
50 +0.065
7.0
DZ23C10
V15 9.4-10.6
15
70 +0.065
7.5
DZ23C11
V16 10.4-11.6
20
70 +0.070
8.5
DZ23C12
V17 11.4-12.7
20
90 +0.075
9.0
DZ23C13
V18 12.4-14.1
25
110 +0.080
10.0
DZ23C15
V19 13.8-15.6
30
110 +0.080
11.0
DZ23C16
V20 15.30-17.1
40
170 +0.090
12.0
DZ23C18
V21 16.8-19.1
50
170 +0.090
14.0
DZ23C20
V22 18.8-21.2
50
220 +0.090
15.0
DZ23C22
V23 20.8-23.3
55
220 +0.090
17.0
DZ23C24
V24 22.8-25.6
80
220 +0.090
18.0
DZ23C27
V25 25.1-28.9
80
250 +0.090
20.0
DZ23C30 V26 28-32
80
250 +0.090
22.5
DZ23C33 V27 31-35
80
250 +0.090
25.0
DZ23C36
V28 34-39
90
250 +0.090
27.0
DZ23C39
V29 37-41
90
300 +0.110
29.0
DZ23C43
V30 40-46
100
700 +0.110
32.0
DZ23C47
V31 44-50
100
750 +0.110
35.0
DZ23C51
V32 48-54
100
750 +0.110
38.0
Notes: 1. Device on fiberglass substrate.
2. Tested with IZTcurrent pulses. Pulse width = 5.0ms.
- 791 -
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DZ23C3V9 diode
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