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PDF 1SS321 Data sheet ( Hoja de datos )
| Número de pieza | 1SS321 | |
| Descripción | DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) | |
| Fabricantes | Toshiba Semiconductor | |
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS321
Low Voltage High Speed Switching
1SS321
Unit: mm
z Low forward voltage
z Low reverse current
z Small package
: VF = 0.42V (typ.)
: IR = 500nA (max)
: SC-59 (SOT-23MOD)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
12 V
Reverse voltage
VR 10 V
Maximum (peak) forward current
IFM
150 (*)
mA
Average forward current
IO
50 (*)
mA
Surge current (10ms)
IFSM
1000 (*)
mA
Power dissipation
P 150 mW
Junction temperature
Tj
125 °C JEDEC
SOT−23MOD
Storage temperature
Tstg
−55∼125
°C
EIAJ
SC−59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
Weight: 0.012g
1−3G1F
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = unit rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 50mA
― VR = 10V
― VR = 0, f = 1MHz
Marking
Min Typ. Max Unit
― 0.32 ―
― 0.42 ―
V
― 0.63 1.00
― ― 500 nA
― 3.2 4.5 pF
1 2007-11-01
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
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| PDF Descargar | [ Datasheet 1SS321.PDF ] | |
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