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MBR20100CT 반도체 회로 부품 판매점

High Power Schottky Diode



VIKING TECH 로고
VIKING TECH
MBR20100CT 데이터시트, 핀배열, 회로
Data Sheet
Customer
Product :
Part No.:
Issued Date:
High Power Schottky Diode
MBR2040CT/MBR2060CT/MBR20100CT/MBR20150CT
MBR20200CT/MBR20250CT
11-Jan-11
Edition :
REV.A
VIKING TECH CORPORATION
光頡科技股份有限公司
VIKING TECH CORPORATION KAOHSIUNG BRANCH WUXI TMTEC CO., LTD.
光頡科技股份有限公司高雄分公司
無錫泰銘電子有限公司
No.70, Kuanfu N. Rad.,
Hsin Chu Industrial Park,
Hukou Hsiang, Hsin Chu Hsien,
303, Taiwan
TEL:886-3-5972931
FAX:886-3-5972935886-3-5973494
No.248-3, Sin-Sheng Rd., Cian-Jhen Dist., Kaohsiung,
806, Taiwan
TEL:886-7-8217999
FAX:886-7-8228229
No.1A,(Xixia Road),Machinery & Industry Park,
National Hi-Tech Industrial Development Zone of
Wuxi, Wuxi, Jiangsu Province, China
Zip Code:214028
TEL:86-510-85203339
FAX:86-510-8520366786-510-85203977
Produced by
(QC)
11-Jan-11
Kris
Checked
(QC)
11-Jan-11
Ann
Approved by
(QC)
11-Jan-11
J.C Liu
Prepared by
(Sales)
11-Jan-11
Accepted by
(Customer)
Tel: +886-3-597-2931Fax: +886-3-597-2935
70, Kuanfu N Road, HsinChu Industrial Park, 303 Taiwan, ROC
1


MBR20100CT 데이터시트, 핀배열, 회로
20 Amperes High Power Schottky Barrier Rectifiers
Voltage : 40 to 250Volts
Features
For use in low voltage, high frequency inverters, free wheeling and polarity protection applications
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
Guardring for overvoltage protection
Ultra high-speed switching
Silicon epitaxial planar chip, metal silicon junction
Lead-free parts meet environmental standards of MIL-STD-19500/228
Mechanical Data
Epoxy : UL94-V0 rated flame retardant
CaseJEDEC TO-220AB molded plastic body over
Terminals : Axial leads, Solderable per MIL-STD-202, Method 208 guranteed
PolarityColor band denotes cathode end
Mounting Position : Any
Weight : Approximated 2.25 gram
Package : 50pcs per Tube
Package Dimensions in inches(millimeters): TO-220AB
Maximum Ratings And Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Symbol
MBR2040CT MBR2060CT MBR20100CT MBR20150CT MBR20200CT
Marking Code
MBR2040CT MBR2060CT MBR20100CT MBR20150CT MBR20200CT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward Voltage@10A, TA=25
@10A, TA=125
@20A, TA=25
VRRM
VRMS
VDC
VF
40
28
40
0.70
0.57
0.84
60
42
60
0.79
0.70
0.95
100
70
100
0.81
0.71
0.95
150
105
150
0.87
0.77
1.0
200
140
200
0.90
0.80
1.0
Operating Temperature
TJ
-50 ~ +150
MBR20250CT
MBR20250CT
250
175
250
0.95
0.85
-
Unit
V
V
V
V
Parameter
Forward Rectified Current
Forward Surge Current
Reverse Current
Thermal Resistance
Diode Junction Capacitance
Storage Temperature
Conditions
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VR=VRRM , TA=25
VR=VRRM , TA=125
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
IR
RΘJA
CJ
TSTG
Min.
-50
Typ.
30
150
Max.
20
150
0.1
10
+150
Unit
A
A
mA
/W
pF
Tel: +886-3-597-2931Fax: +886-3-597-2935
70, Kuanfu N Road, HsinChu Industrial Park, 303 Taiwan, ROC
2




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MBR20100CT diode

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