1N4745 반도체 회로 부품 판매점
Zener Diodes
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 LGE |
Features
Silicon planar power zener diodes
For use in stabilizing and clipping circuits with high
power rating.
Standard zener voltage tolerance is ±10%. Add
suffix "A" for ±5% tolerance. other zener voltage
and tolerances are available upon request.
Mechanical Data
Cas e:DO-41
Terminals: solderable per MIL-STD-202, method 208
Polarity: cathode band
Marking: type number
Approx. weight: 0.35 grams.
1N4728-1N4764
Zener Diodes
POWER DISSIPATION: 1.0 W
DO-41
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Zener current (see Table "Characteristics")
Pow er dissipation @ Tamb 50
Z-current
Junction temperature
Storage temperature range
Junction ambient I=9.5mm(3/8 ), TL=constant
SYMBOL
VALUE
PDiss
IZ
TJ
Ts
RThJA
1.01)
PV/VZ
200
-55---+200
100
Forw ard voltage at IF=200mA
SYMBOL
VF
MIN
TYP
MAX
1.2
UNIT
W
mA
K/W
UNIT
V
http://www.luguang.cn
mail:[email protected]
1N4728-1N4764
Zener Diodes
ELECTRICAL CHARACTERISTICS (TA=25 )
Type
Nominal
zener
voltage 1)
V z@IZT
Tes t
current
Maximum dynamic impedance
IZT
ZZT@IZT ZZK@IZK
IZK
Maximum reverse
leakage current
IR @V R
Max surge
current
8.3ms
IR@Tamb
=25
Max imum
regulator
current 2)
IZM @Tamb
=50
1N4728
1N4729
1N4730
1N4731
1N4732
1N4733
1N4734
1N4735
1N4736
1N4737
1N4738
1N4739
1N4740
1N4741
1N4742
1N4743
1N4744
1N4745
1N4746
1N4747
1N4748
1N4749
1N4750
1N4751
1N4752
1N4753
1N4754
1N4755
1N4756
1N4757
1N4758
1N4759
1N4760
1N4761
1N4762
1N4763
1N4764
(V)
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
(mA )
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
(Ω) (Ω) (mA)
10 400 1.0
10 400 1.0
9 400 1.0
9 400 1.0
8 500 1.0
7 550 1.0
5 600 1.0
2 700 1.0
3.5 700 1.0
4.0 700 0.5
4.5 700 0.5
5.0 700 0.5
7 700 0.25
8 700 0.25
9 700 0.25
10 700 0.25
14 700 0.25
16 700 0.25
20 750 0.25
22 750 0.25
23 750 0.25
25 750 0.25
35 750 0.25
40
1000
0.25
45
1000
0.25
50
1000
0.25
60
1000
0.25
70
1500
0.25
80
1500
0.25
95
1500
0.25
110 2000 0.25
125 2000 0.25
150 2000 0.25
175 2000 0.25
200 3000 0.25
250 3000 0.25
350 3000 0.25
(μA )
100
100
50
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
79.0
(mA )
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
90
80
70
65
60
55
50
45
(mA )
276
252
234
217
193
178
462
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
34
30
27
25
23
22
19
18
16
14
13
12
11
10
9
1)Based on dc_m easurem ent at theral equilibrium while m aitaining the lead tem perature (TL) at 30 +1 ,9.5m m (3/8")f rom the D iode body .
2)Valid prov ided that electrodes at a distance of 10 m m f orm case kept at am bient temperature.
*)Additionnal m easurem ent of v oltage gruup 9v 1 to 75 at 95% VZMIN 35nA at TJ25
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1N4745 diode
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국내 전력반도체 판매점
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