BZX79C5V6 반도체 회로 부품 판매점
SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
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 CDIL |
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C 2V4 to 51V
DO-35 500mW
These Zeners Are Best Suited for Industrial Purpose, Military & Space Applications
when Hermetcally Sealed in Glass with Double Stud This Glass Passivated Chip
Provides Excellent Stability & Reliability.
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)
DESCRIPTION
SYMBOL
Power Dissipation
PD
Surge Power Dissipation @ tp=83ms
PDS
Operating & Storage Junction
Tj, Tstg
Temperature Range
Thermal Resistance Junction to Ambient (1) Rth(j-a)
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified)
Forward Voltage @ IF=200mA
VF
(1) On infinite Heatsink With 4mm Lead Length.
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified)
Device VZT @ IZT * rZT @ IZT rZK @ IZK Temp. Coeff
of
VZ
min max max max min max
(V) (V) (ohm) (mA) (ohm) (mA) (mV/deg C)
BZX79C 2V4 2.20 2.60 100
5.0 600 1.0 -3.5
0
BZX79C 2V7 2.50 2.90 100
5.0 600 1.0 -3.5
0
BZX79C 3V0 2.80 3.20 95
5.0 600 1.0 -3.5
0
BZX79C 3V3 3.10 3.50 95
5.0 600 1.0 -3.5
0
BZX79C 3V6 3.40 3.80 90
5.0 600 1.0 -3.5
0
BZX79C 3V9 3.70 4.10 90
5.0 600 1.0 -3.5
0
BZX79C 4V3 4.00 4.60 90
5.0 600 1.0 -3.5
0
BZX79C 4V7 4.40 5.00 80
5.0 500 1.0 -3.5
0.2
BZX79C 5V1 4.80 5.40 60
5.0 480 1.0 -2.7
1.2
BZX79C 5V6 5.20 6.00 40
5.0 400 1.0 -2.0
2.5
BZX79C 6V2 5.80 6.60 10
5.0 150 1.0 0.4 3.7
BZX79C 6V8 6.40 7.20 15
5.0 80 1.0 1.2 4.5
BZX79C 7V5 7.00 7.90 15
5.0 80 1.0 2.5 5.3
BZX79C 8V2 7.70 8.70 15
5.0 80 1.0 3.2 6.2
BZX79C 9V1 8.50 9.60 15
5.0 100 1.0 3.8 7
BZX79C 10 9.40 10.60 20
5.0 150 1.0 4.5 8
BZX79C 11 10.40 11.60 20
5.0 150 1.0 5.4 9
BZX79C 12 11.40 12.70 25
5.0 150 1.0
6.0 10
BZX79C 13 12.40 14.10 30
5.0 170 1.0
7.0 11
BZX79C 15 13.80 15.60 30
5.0 200 1.0
9.2 13
BZX79C 16 15.30 17.10 40
5.0 200 1.0 10.4 14
BZX79C 18 16.80 19.10 45
5.0 225 1.0 12.4 16
BZX79C 20 18.80 21.20 55
5.0 225 1.0 14.4 18
BZX79C 22 20.80 23.30 55
5.0 250 1.0 16.4 20
VALUE
500
5.0
-65 to +200
300
1.5
IR @
Tamb
25 deg C 150degC
max max
(uA)
(uA)
50 100
20 50
10 40
5.0 40
5.0 40
3.0 40
3.0 20
3.0 10
2.0 10
1.0 10
3.0 10
2.0 5.0
1.0 5.0
0.7 2.0
0.5 2.0
0.2 2.0
0.1 2.0
0.1 2.0
0.1 2.0
0.05 2.0
0.05 2.0
0.05 2.0
0.05 2.0
0.05 2.0
UNIT
mW
W
deg C
deg C/W
V
VR IZM
max
(V) (mA)
1.0 155
1.0 135
1.0 125
1.0 115
1.0 105
1.0 95
1.0 90
2.0 85
2.0 80
2.0 70
4.0 64
4.0 58
5.0 53
5.0 47
6.0 43
7.0 40
8.0 36
8.0 32
8.0 29
10 27
11 24
13 21
14 20
15 18
Continental Device India Limited
Data Sheet
Page 1 of 4
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified)
Device VZT @ IZT * rZT @ IZT rZK @ IZK Temp. Coeff
of
VZ
min max max
max
min max
(V) (V) (ohm) (mA) (ohm) (mA) (mV/deg C)
BZX79C 24 22.80 25.60 70 5.0 250 1.0 18.4 22
BZX79C 27 25.10 28.90 80 2.0 300 0.5 21.4 25.3
BZX79C 30 28.00 32.00 80 2.0 300 0.5 24.4 29.4
BZX79C 33 31.00 35.00 80 2.0 325 0.5 27.4 33.4
BZX79C 36 34.00 38.00 90 2.0 350 0.5 30.4 37.4
BZX79C 39 37.00 41.00 130 2.0 350 0.5 33.4 41.2
BZX79C 43 40.00 46.00 150 2.0 375 0.5 37.6 46.6
BZX79C 47 44.00 50.00 170 2.0 375 0.5
42 51.8
BZX79C 51 48.00 54.00 180 2.0 400 0.5 46.6 57.2
*Pulse Condition : 20ms= tp=50ms . Duty Cycle=2%
IR @
VR
Tamb
25 deg C 150degC
max max
(uA)
(uA) (V)
0.05 2.0 17
0.05 2.0 19
0.05 2.0 21
0.05 2.0 23
0.05 2.0 25
0.05 2.0 27
0.05 2.0 29
0.05 2.0 33
0.05 2.0 36
IZM
max
(mA)
16
14
13
12
11
10
9.2
8.5
7.8
Continental Device India Limited
Data Sheet
Page 2 of 4
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제조업체: CDIL
( cdil )
BZX79C5V6 diode
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