BZT52C2V7S 반도체 회로 부품 판매점
(BZT52C2V0S - BZT52C39S) Surface mount zener diode
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 Galaxy Semi-Conductor |
BL Galaxy Electrical
Production specification
Surface mount zener diode
BZT52C2V0S-BZT52C39S
FEATURES
z Planar die construction.
z General purpose, medium current.
Pb
Lead-free
z Ideally suited for automated assembly processes.
APPLICATIONS
z Zener diode.
z Ultra-small surface mount package.
ORDERING INFORMATION
Type No.
Marking
BZT52C2V4S-BZT52C51S
See table 2
SOD-323
Package Code
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Value
Forward Voltage
Power Dissipation
@ IF=10mA
VF
Pd
0.9
200
Thermal resistance,junction to ambient air
RθjA
625
Junction temperature
Tj 150
Storage temperature range
Tstg -65-150
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Short duration test pulse used in minimize self-heating effect.
3. f = 1KHz.
Unit
V
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSZDB019
Rev.A
www.galaxycn.com
1
Free Datasheet http://www.datasheet4u.com/
BL Galaxy Electrical
Production specification
Surface mount zener diode
BZT52C2V0S-BZT52C39S
Marking
Type Number
Code
Zener Voltage Range
Maximum Zener
Impedance
VZ@IZT
IZT ZZT@IZT ZZK@IZK IZK
Maximum
Reverse
Current
IR @VR
Nom(V) Min(V) Max(V) mA Ω mA μA V
BZT52C2V0S WY
2.0 1.91 2.09 5 100
600 1.0 150 1.0
BZT52C2V4S WX
2.4 2.2 2.60 5 100
600 1.0 50 1.0
BZT52C2V7S W1
2.7 2.5 2.9 5 100
600 1.0 20 1.0
BZT52C3V0S W2
3.0 2.8 3.2 5 95
600 1.0 10 1.0
BZT52C3V3S W3
3.3 3.1 3.5 5 95
600 1.0 5 1.0
BZT52C3V6S W4
3.6 3.4 3.8 5 90
600 1.0 5 1.0
BZT52C3V9S W5
3.9 3.7 4.1 5 90
600 1.0 3 1.0
BZT52C4V3S W6
4.3 4.0 4.6 5 90
600 1.0 3 1.0
BZT52C4V7S W7
4.7 4.4 5.0 5 80
500 1.0 3 2.0
BZT52C5V1S W8
5.1 4.8 5.4 5 60
480 1.0 2 2.0
BZT52C5V6S W9
5.6 5.2 6.0 5 40
400 1.0 1 2.0
BZT52C6V2S WA
6.2 5.8 6.6 5 10
150 1.0 3 4.0
BZT52C6V8S WB
6.8 6.4 7.2 5 15
80 1.0 2 4.0
BZT52C7V5S WC 7.5 7.0 7.9 5 15
80 1.0 1 5.0
BZT52C8V2S WD 8.2 7.7 8.7 5 15
80 1.0 0.7 5.0
BZT52C9V1S WE
9.1 8.5 9.6 5 15
100 1.0 0.5 6.0
BZT52C10S
WF
10
9.4 10.6 5
20
150 1.0 0.2 7.0
BZT52C11S
WG
11 10.4 11.6 5 20
150 1.0 0.1 8.0
BZT52C12S
WH
12 11.4 12.7 5 25
150 1.0 0.1 8.0
BZT52C13S
WI
13 12.4 14.1 5 30
170 1.0 0.1 8.0
BZT52C15S
WJ
15 13.8 15.6 5 30
200 1.0 0.1 10.5
BZT52C16S
WK
16 15.3 17.1 5 40
200 1.0 0.1 11.2
BZT52C18S
WL
18 16.8 19.1 5 45
225 1.0 0.1 12.6
BZT52C20S
WM
20 18.8 21.2 5 55
225 1.0 0.1 14.0
BZT52C22S
WN
22 20.8 23.3 5 55
250 1.0 0.1 15.4
BZT52C24S
WO
24 22.8 25.6 5 70
250 1.0 0.1 16.8
BZT52C27S
WP
27 25.1 28.9 2 80
300 0.5 0.1 18.9
BZT52C30S
WQ
30 28.0 32.0 2 80
300 0.5 0.1 21.0
BZT52C33S
WR
33 31.0 35.0 2 80
325 0.5 0.1 23.1
BZT52C36S
WS
36 34.0 38.0 2 90
350 0.5 0.1 25.2
BZT52C39S
WT
39
37.0 41.0 2
130
350 0.5 0.1 27.3
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, period=5ms, pulse width = 300μs.
3. f = 1KHz.
Temperature
Coefficient of
zener voltage @
IZTC mV/℃
Min Max
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0.2
-2.7 1.2
-2.0 2.5
0.4 3.7
1.2 4.5
2.5 5.3
3.2 6.2
3.8 7.0
4.5 8.0
5.4 9.0
6.0 10.0
7.0 11.0
9.2 13.0
10.4 14.0
12.4 16.0
14.4 18.0
16.4 20.0
18.4 22.0
21.4 25.3
24.4 29.4
27.4 33.4
30.4 37.4
33.4 41.2
Document number: BL/SSZDB019
Rev.A
www.galaxycn.com
2
Free Datasheet http://www.datasheet4u.com/
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BZT52C2V7S diode
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