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PDF LN66F Data sheet ( Hoja de datos )
| Número de pieza | LN66F | |
| Descripción | GaAs Infrared Light Emitting Diode | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LN66F (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Infrared Light Emitting Diodes
LN66F
GaAs Infrared Light Emitting Diode
For light source of remote control systems
Features
High-power output, high-efficiency : Ie = 13.0 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors
Narrow directivity : θ = 15 deg. (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
* f = 100 Hz, Duty cycle = 0.1 %
Symbol Ratings
PD 75
IF 50
IFP* 1.5
VR 3
Topr –25 to +85
Tstg – 40 to +100
Unit
mW
mA
A
V
˚C
˚C
ø5.0±0.2
Unit : mm
2-1.0±0.15
2-0.6±0.15
2.54
21
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant intensity at center
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Pulse forward voltage
Reverse current (DC)
Capacitance between pins
Half-power angle
* f = 100 Hz, Duty cycle = 0.1 %
Symbol
Ie
λP
∆λ
VF
VFP*
IR
Ct
θ
Conditions
IF = 50mA
IF = 50mA
IF = 50mA
IF = 50mA
IFP = 1.0A
VR = 3V
VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
min typ max Unit
13 mW/sr
950 nm
50 nm
1.35 1.50
V
3.0 V
10 µA
20 pF
15 deg.
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LN66F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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