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PDF MBD770DWT1 Data sheet ( Hoja de datos )
| Número de pieza | MBD770DWT1 | |
| Descripción | (MBDxx0DWT1) Dual Schottky Barrier Diodes | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBD110DWT1/D
Dual Schottky Barrier Diodes
Application circuit designs are moving toward the consolidation of device count and
into smaller packages. The new SOT–363 package is a solution which simplifies
circuit design, reduces device count, and reduces board space by putting two discrete
devices in one small six–leaded package. The SOT–363 is ideal for low–power
surface mount applications where board space is at a premium, such as portable
products.
Surface Mount Comparisons:
Area (mm2)
Max Package PD (mW)
Device Count
SOT–363
4.6
120
2
SOT–23
7.6
225
1
Space Savings:
Package
SOT–363
1 SOT–23
40%
2 SOT–23
70%
The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our
popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They
are designed for high–efficiency UHF and VHF detector applications. Readily
available to many other fast switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
MBD110DWT1
MBD330DWT1
MBD770DWT1
Motorola Preferred Devices
6 54
123
CASE 419B–01, STYLE 6
SOT–363
MAXIMUM RATINGS
Reverse Voltage
Rating
Forward Power Dissipation
TA = 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MBD110DWT1 = M4
MBD330DWT1 = T4
MBD770DWT1 = H5
MBD110DWT1
MBD330DWT1
MBD770DWT1
Symbol
VR
PF
TJ
Tstg
Value
7.0
30
70
120
– 55 to +125
– 55 to +150
Unit
Vdc
mW
°C
°C
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa, SInmc. 1a9ll9–6Signal Transistors, FETs and Diodes Device Data
1
1 page  
2.0
MBD770DWT1
1.6
1.2
MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS
MBD770DWT1
f = 1.0 MHz
500
MBD770DWT1
400
KRAKAUER METHOD
300
0.8 200
0.4 100
0
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Total Capacitance
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 11. Minority Carrier Lifetime
10
MBD770DWT1
1.0 TA = 100°C
TA = 75°C
0.1
0.01 TA = 25°C
0.001
0
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Reverse Leakage
100
MBD770DWT1
10
TA = 85°C
TA = – 40°C
1.0
TA = 25°C
0.1
50 0.2 0.4 0.8 1.2 1.6
VF, FORWARD VOLTAGE (VOLTS)
Figure 13. Forward Voltage
2.0
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MBD770DWT1.PDF ] | |
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