HZ30L 반도체 회로 부품 판매점
Silicon Epitaxial Planar Zener Diode for Low Noise Application
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 Renesas Technology |
HZ-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
REJ03G0182-0200Z
(Previous: ADE-208-118A)
Rev.2.00
Mar.11.2004
Features
• Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
• Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc.
• Wide spectrum from 5.2V through 38 V of zener voltage provide flexible application.
Ordering Information
Type No.
HZ-L Series
Mark
Type No.
Package Code
DO-35
Pin Arrangement
7
B2
1
2
Body color is orange
Type No.
Cathode band
1. Cathode
2. Anode
Rev.2.00, Mar.11.2004, page 1 of 5
HZ-L Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
400
175
−55 to +175
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Type
Grade
VZ (V)*1
Min
HZ6L
A1
5.2
A2 5.3
A3 5.4
B1 5.5
B2 5.6
B3 5.7
C1 5.8
C2 6.0
C3 6.1
HZ7L
A1
6.3
A2 6.4
A3 6.6
B1 6.7
B2 6.9
B3 7.0
C1 7.2
C2 7.3
C3 7.5
HZ9L
A1
7.7
A2 7.9
A3 8.1
B1 8.3
B2 8.5
B3 8.7
C1 8.9
C2 9.1
C3 9.3
HZ11L A1
9.5
A2 9.7
A3 9.9
B1 10.2
B2 10.4
B3 10.7
Note: 1. Tested with DC.
Max
5.5
5.6
5.7
5.8
5.9
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.6
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.1
10.3
10.6
10.8
11.1
Test
Condition
IZ (mA)
0.5
Reverse Current
IR (µA)
Test
Condition
Max
VR (V)
1 2.0
(Ta = 25°C)
Dynamic Resistance
rd (Ω)
Test
Condition
Max
IZ (mA)
150 0.5
80 0.5
60 0.5
0.5 1
3.5 60
0.5
0.5 1
6.0 60
0.5
0.5 1
8.0 80
0.5
Rev.2.00, Mar.11.2004, page 2 of 5>
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( renesas )
HZ30L diode
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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