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NTE |
NTE555
Silicon Pin Diode
UHF/VHF Detector
Description:
The NTE555 is designed primarily for high–efficiency UHF and VHF detector applications. It is readily
adaptable to may other fast switching RF and digital applications.
Features:
D Schottky Barrier Construction Provides Stable Characteristics by Eliminating
the “Cat–Whisker” or “S–Bend” Contact
D Very Low Capacitance: 1.0pF
D Extremely Low Minority Carrier Lifetime: 100ps (Max)
D High Reverse Voltage: VR = 50V
D Low Reverse Leakage Current: IR = 200nA (Max)
Absolute Maximum Ratings: (TJ = +125°C, unless otherwise indicated)
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Forward Power Dissipation (TA = 25°C), PF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (TA = +25°C, unless otherwise indicated)
Parameter
Symbol
Test Conditions
Reverse Breakdown Voltage
Diode Capacitance
Minority Carrier Lifetime
Reverse Leakage Current
Forward Voltage
Case Capactiance
V(BR)R
CT
r
IR
VF
CC
IR = 10µA
VR = 20V, f = 1MHz
IF = 5mA, Krakauer Method
VR = 25V
IF = 10mA
f = 1MHz
Min Typ Max Unit
50 – – V
– 0.48 1.0 pF
– 15 100 ps
– 7 200 nA
– 1.0 1.2 V
– 0.1 – pF
.027 (0.68) Max
Cathode
.162 (4.12) Max
Anode
.125
(3.17)
Max
.103 (2.6) Max
.502 (12.76) Max
.061 (1.54) Max
.035 (0.88) Max
.041 (1.04) Max
.055 (1.4)
Max
.085 (2.15)
Max
.170 (4.31) Max
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