파트넘버.co.kr MF35 데이터시트 PDF


MF35 반도체 회로 부품 판매점

Fast Recovery Diode



Dynex 로고
Dynex
MF35 데이터시트, 핀배열, 회로
Replaces March 1998 version, DS4625-3.1
APPLICATIONS
s Inverse, Parallel Or Series Connected Diode
s Power Supplies
s High Frequency Applications
FEATURES
s Glass Passivation
s High Voltage Capability
s Fast Recovery Characteristics
MF35
MF35
Fast Recovery Diode
DSDS4625-4.0 January 2000
KEY PARAMETERS
VRRM
IF(AV)
IFSM
Qr
trr
1200V
40A
400A
10µC
0.2ns
VOLTAGE RATINGS
Type Number
MF35 - 1200
MF35 - 1000
MF35 - 800
MF35 - 600
Repetitive Peak
Reverse Voltage
V
RRM
V
1200
1000
800
600
Conditions
V = V +100V
RSM
RRM
Lower voltage grades available.
For stud anode add suffix 'R' to type number. e.g. MF35-1200R.
Outline type code: DO5.
See Package Details for further information.
CURRENT RATINGS
Symbol
IF(AV)
I
F(RMS)
IF
Parameter
Mean forward current
RMS value
Continuous (direct) forward current
Conditions
Half sine wave resistive load, T = 65oC
case
Tcase = 65oC
Tcase = 65oC
Max.
40
63
50
Units
A
A
A
1/8


MF35 데이터시트, 핀배열, 회로
MF35
SURGE RATINGS
Symbol
Parameter
IFSM Surge (non-repetitive) forward current
I2t I2t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Tvj Virtual junction temperature
T Storage temperature range
stg
- Mounting torque
CHARACTERISTICS
Symbol
Parameter
V Forward voltage
FM
I Peak reverse current
RM
trr Reverse recovery time
QR Recovered charge
VTO Threshold voltage
r
T
Slope resistance
Conditions
10ms half sine; with VRRM 10V, Tj = 125oC
10ms half sine; T = 125oC
j
Max.
400
800
Units
A
A2s
Conditions
dc
Mounting torque 3.5Nm
with mounting compound
Forward (conducting)
Reverse (blocking)
Min. Max. Units
- 0.8 oC/W
- 0.2 oC/W
- 125 oC
- 125 oC
-55 125 ˚C
3.2 3.8 Nm
Conditions
At 120A peak, T = 25oC
case
At V , T = 100oC
RRM case
IF = 1A, diRR/dt = 25A/µs, Tcase = 25˚C,
VR = 100V
IF = 50A, diRR/dt = 50A/µs, Tcase = 25˚C,
VR = 100V
At T = 125oC
vj
At T = 125oC
vj
Typ. Max. Units
- 2.0 V
- 5 mA
- 200 ns
- 10 µC
- 1.2 V
- 7.0 m
2/8




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MF35 diode

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