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PDF TVR5B Data sheet ( Hoja de datos )

Número de pieza TVR5B
Descripción TOSHIBA Fast Recovery Diode Silicon Diffused Type
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! TVR5B Hoja de datos, Descripción, Manual

TVR5B,TVR5G,TVR5J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR5B,TVR5G,TVR5J
TV Applications (fast recovery)
Unit: mm
· Average Forward Current: IF (AV) =0.5 A
· Repetitive Peak Reverse Voltage: VRRM = 100 V, 400V, 600V
· Reverse Recovery Time: trr = 1.5 µs
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak
reverse voltage
TVR5B
TVR5G
TVR5J
Average forward current
Peak one cycle surge forward current
(non repetitive)
Junction temperature
Storage temperature range
Symbol
VRRM
IF (AV)
IFSM
Tj
Tstg
Rating
100
400
600
0.5
20
-40 to 125
-40 to 125
Unit
V
A
A
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Symbol
VFM
IRRM
trr (1)
trr (2)
Test Condition
IFM = 0.5 A
VRRM = Rated
IF = 20 mA, IR = 1 mA
IF = 100 mA, IR = 100 mA
JEDEC
JEITA
TOSHIBA
3-3F2A
Weight: 0.18 g (typ.)
Min Typ. Max Unit
¾ ¾ 1.2 V
¾ ¾ 10 mA
¾ ¾ 1.5 ms
¾ ¾ 500 ms
Marking
Type Code Lot No.
Month (starting from alphabet A)
V5J
Year (last number of the christian era)
Cathode Mark
Color: Silver
Code
V5B
V5G
V5J
Type
TVR5B
TVR5G
TVR5J
1 2002-09-18

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