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Siemens Semiconductor Group |
Silicon Switching Diode Array
• For high-speed switching applications
• Connected in series
• Internal (galvanic) isolated Diodes
in one package
BAV 99S
4
5
6
3
2
1 VPS05604
Type
BAV 99S
Marking Ordering Code
A7s Q62702-A1277
Maximum Ratings
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total power dissipation, TS = 85 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - ambient 1)
Junction - soldering point
Pin Configuration
Package
1/4 = A1 2/5 = C2 3/6=C1/A2 SOT-363
Symbol
VR
VRM
IF
IFS
Ptot
Tj
Tstg
RthJA
RthJS
Value
70
70
200
4.5
250
150
65 ...+150
≤ 530
≤ 260
Unit
V
mA
A
mW
°C
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
SSeemmicioconndduuctcotor rGGrorouupp
11
Apr1-29798-1-1919-081
BAV 99S
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Breakdown voltage
I(BR) = 100 µA
V(BR)
70 -
-V
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VF mV
- - 715
- - 855
- - 1000
- - 1250
Reverse current
VR = 70 V
Reverse current
VR = 25 V, TA = 150 °C
VR = 70 V, TA = 150 °C
IR - - 2.5 µA
IR nA
- - 30
- - 50
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100 Ω,
measured at IR = 1mA
CD - - 1.5 pF
trr - - 6 ns
Test circuit for reverse recovery time
D.U.T.
Oscillograph
ΙF
EHN00019
Pulse generator: tp = 100ns, D = 0.05,
tr = 0.6ns, Ri = 50Ω
Oscillograph: R = 50Ω, tr = 0.35ns,
C ≤ 1pF
SSeemmicioconndduuctcotor rGGrorouupp
22
Apr1-29798-1-1919-081
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