BAT60J 반도체 회로 부품 판매점
SMALL SIGNAL SCHOTTKY DIODE
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 STMicroelectronics |
® BAT60J
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
n VERY SMALL CONDUCTION LOSSES
n NEGLIGIBLE SWITCHING LOSSES
n LOW FORWARD VOLTAGE DROP
n EXTREMELY FAST SWITCHING
n SURFACE MOUNTED DEVICE
A 60 K
DESCRIPTION
Schottky barrier diode encapsulated in a SOD-323
small SMD package.
This device is intended for use in portable
equipments. It is suited for DC to DC converters,
step-up conversion and power management.
SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF Peak forward current
IFSM Surge non repetitive forward current
Ptot Power Dissipation
Tstg Storage temperature range
Tj Maximum operating junction temperature *
TL Maximum temperature for soldering during 10s
δ = 0.11
tp=10ms
Ta=25°C
Value
10
3
5
310
- 65 to +150
150
260
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j − a)
Unit
V
A
A
mW
°C
°C
°C
THERMAL RESISTANCE
Symbol
Parameter
Rth (j-a) Junction to ambient (*)
(*) Mounted on epoxy board with recommended pad layout.
May 2000 - Ed: 4A
Value
400
Unit
°C/W
1/5
BAT60J
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Tests Conditions
Tests conditions
VF * Forward voltage drop
Tj = 25°C
IF = 10 mA
IF = 100 mA
IF = 1 A
IR ** Reverse leakage current Tj = 25°C
VR = 5 V
Tj = 25°C
VR = 8 V
Tj = 80°C
VR = 8 V
Pulse test: * tp = 380µs, δ < 2%
** tp = 5ms, δ < 2%
To evaluate the conduction losses the following equation:
P = 0.38 x IF(AV) + 0.17 IF2(RMS)
Min.
Typ.
0.28
0.35
0.53
1
1.3
73
Max.
0.32
0.40
0.58
3
4
150
Unit
V
µA
2/5
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BAT60J diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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