BAS55 반도체 회로 부품 판매점
High-speed diode
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS55
High-speed diode
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
1996 Sep 10
Philips Semiconductors
High-speed diode
Product specification
BAS55
FEATURES
• Small plastic SMD package
• High switching speed: max. 6 ns
• Continuous reverse voltage:
max. 60 V
• Repetitive peak reverse voltage:
max. 60 V
• Repetitive peak forward current:
max. 600 mA.
APPLICATIONS
• High-speed switching in surface
mounted circuits.
DESCRIPTION
The BAS55 is a high-speed switching
diode fabricated in planar technology,
and encapsulated in the small
rectangular plastic SMD SOT23
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
handbook, halfpa2ge
1
2
n.c.
1
Marking code: L5p.
3
3
MAM185
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VRRM
VR
IF
IFRM
IFSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t = 10 ms
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
MAX.
60
60
250
600
UNIT
V
V
mA
mA
− 9A
− 3A
− 1.7 A
− 250 mW
−65 +150 °C
− 150 °C
1996 Sep 10
2
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BAS55 diode
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국내 전력반도체 판매점
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