1N5249B 반도체 회로 부품 판매점
Absolute Maximum Ratings
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 Fairchild Semiconductor |
1N5226B - 1N5257B Series Half Watt Zeners
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Parameter
Value
Units
Storage Temperature Range
Maximum Junction Operating Temperature
Lead Temperature (1/16” from case for 10 seconds)
Total Device Dissipation
Derate above 75°C
Surge Power**
-65 to +200
+ 200
+ 230
500
4.0
10
°C
°C
°C
mW
mW/°C
W
*These ratings are limiting values above which the serviceability of the diode may be impaired.
**Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
Tolerance: B = 5%
DO-35
Electrical Characteristics TA = 25°C unless otherwise noted
Device
VZ
(V)
ZZ @ IZT
(Ω) (mA)
ZZK @ IZK
(Ω) (mA)
1N5226B
3.3
28
20
1,600
0.25
1N5227B
3.6
24
20
1,700
0.25
1N5228B
3.9
23
20
1,900
0.25
1N5229B
4.3
22
20
2,000
0.25
1N5230B
1N5231B
1N5232B
1N5233B
4.7 19
5.1 17
5.6 11
6.0 7.0
20
1,900
0.25
20
1,600
0.25
20
1,600
0.25
20
1,600
0.25
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
6.2 7.0
6.8 5.0
7.5 6.0
8.2 8.0
8.7 8.0
20
1,000
0.25
20 750 0.25
20 500 0.25
20 500 0.25
20 600 0.25
1N5239B 9.1 10 20 600 0.25
1N5240B 10 17 20 600 0.25
1N5241B 11 22 20 600 0.25
1N5242B 12 30 20 600 0.25
VF Foward Voltage = 1.1 V Maximum @ IF = 200 mA for all 1N5200 series
NOTE: National preferred devices in BOLD
VR @ IR
(V) (µA)
1.0 25
1.0 15
1.0 10
1.0 5.0
2.0 5.0
2.0 5.0
3.0 5.0
3.5 5.0
4.0 5.0
5.0 3.0
6.0 3.0
6.5 3.0
6.5 3.0
7.0 3.0
8.0 3.0
8.4 2.0
9.1 1.0
TC
(%/°C)
- 0.07
- 0.065
- 0.06
+/- 0.055
+/- 0.03
+/- 0.3
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
©1997 Fairchild Semiconductor Corporation
1N5200B Rev. A
Series Zener
(continued)
Electrical Characteristics (continued) TA = 25°C unless otherwise noted
Device
VZ
(V)
ZZ @ IZT
(Ω) (mA)
ZZK @ IZK
(Ω) (mA)
VR
(V)
1N5243B 13 13 9.5 600 0.25
1N5244B 14 15 9.0 600 0.25
1N5245B 15 16 8.5 600 0.25
1N5246B 16 17 7.8 600 0.25
1N5247B 17 19 7.4 600 0.25
1N5248B 18 21 7.0 600 0.25
1N5249B 19 23 6.6 600 0.25
1N5250B 20 25 6.2 600 0.25
1N5251B 22 29 5.6 600 0.25
1N5252B 24 33 5.2 600 0.25
1N5253B 25 35 5.0 600 0.25
1N5254B 27 41 4.6 600 0.25
1N5255B 28 44 4.5 600 0.25
1N5256B 30 49 4.2 600 0.25
1N5257B 33 58 3.8 700 0.25
VF Foward Voltage = 1.1 V Maximum @ IF = 200 mA for all 1N5200 series
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
NOTE: National preferred devices in BOLD
@ IR
(nA)
500
100
100
100
100
100
100
100
100
100
100
100
100
100
100
TC
(%/°C)
0.079
0.082
0.082
0.083
0.084
0.085
0.086
0.086
0.087
0.088
0.089
0.090
0.091
0.091
0.092
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( fairchild )
1N5249B diode
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