1N5230B 반도체 회로 부품 판매점
Voltage regulator diodes
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
1N5225B to 1N5267B
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Apr 26
Philips Semiconductors
Voltage regulator diodes
Product specification
1N5225B to 1N5267B
FEATURES
• Total power dissipation:
max. 500 mW
• Tolerance series: ±5%
• Working voltage range:
nom. 3.0 to 75 V
• Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
• Low-power voltage stabilizers or
voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The series consists of 43 types with nominal working voltages from 3.0 to 75 V.
handbook, halfpage k
a
MAM239
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
IF continuous forward current
IZSM non-repetitive peak reverse current
Ptot total power dissipation
PZSM
non-repetitive peak reverse power
dissipation
Tstg storage temperature
Tj junction temperature
CONDITIONS
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
Tamb = 50 °C; lead length max.;
note 1
Lead length 8 mm; note 2
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.3
tp = 8.3 ms; square wave;
Tj ≤ 55 °C prior to surge
Notes
1. Device mounted on a printed circuit-board without metallization pad.
2. Tie-point temperature ≤ 75 °C.
MIN. MAX.
− 250
see Table
“Per type”
− 400
UNIT
mA
mW
− 500 mW
− 40 W
− 10 W
−65 +200 °C
−65 +200 °C
ELECTRICAL CHARACTERISTICS
Table 1
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
CONDITIONS
IF = 200 mA; see Fig.4
MAX.
1.1
UNIT
V
1996 Apr 26
2
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1N5230B diode
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국내 전력반도체 판매점
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