BZT52-C18 반도체 회로 부품 판매점
SURFACE MOUNT SILICON ZENER DIODES
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 Pan Jit International Inc. |
BZT52-C2V4 thru BZT52-C39
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE 2.4 to 39 Volts
POWER 410 mWatts
FEATURES
• Planar Die construction
• 410mW Power Dissipation
• Zener Voltages from 2.4V - 39V
• Ideally Suited for Automated Assembly Processes
MECHANICAL DATA
• Case: SOD-123, Molded Plastic
• Terminals: Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.008 grams
• Mounting Position: Any
SOD-123
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation (Notes A) at 25OC
Peak Forward Surge Current, 8.3ms single half
sine-wave superimposed on rated load (JEDEC method) (Notes B)
Operating Junction and StorageTemperature Range
Symbol
PD
IFSM
TJ
Value
410
2.0
-55 to +150
Units
mW
Amps
OC
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
Part Number: BZT52-C2V4 - BZT52-C39
PAGE 1
BZT52-C2 thru BZT52-C39
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) VF=1.2V max, IF=100mA for all types.
Part Number
BZT52-C2V4
Nominal Zener Voltage
@ Iz =5mA
V Z @ IZT
Nom. V Min. V Max. V
2.4 2.28 2.56
BZT52-C2V7
2.7
2.5
2.9
BZT52-C3
3 2.8 3.2
BZT52-C3V3
3.3
3.1
3.5
BZT52-C3V6
3.6
3.4
3.8
BZT52-C3V9
3.9
3.7
4.1
BZT52-C4V3
4.3
4
4.6
BZT52-C4V7
4.7
4.4
5
BZT52-C5V1
5.1
4.8
5.4
BZT52-C5V6
5.6
5.2
6
BZT52-C6V2
6.2
5.8
6.6
BZT52-C6V8
6.8
6.4
7.2
BZT52-C7V5
7.5
7
7.9
BZT52-C8V2
8.2
7.7
8.7
BZT52-C9V1
9.1
8.5
9.6
BZT52-C10
10 9.4 10.6
BZT52-C11
11 10.4 11.6
BZT52-C12
12 11.4 12.7
BZT52-C13
13 12.4 14.1
BZT52-C15
15 13.8 15.6
BZT52-C16
16 15.3 17.1
BZT52-C18
18 16.8 19.1
BZT52-C20
20 18.8 21.2
BZT52-C22
22 20.8 23.3
BZT52-C24
24 22.8 25.6
BZT52-C27
27 25.1 28.9
BZT52-C30
30 28 32
BZT52-C33
33 31 35
BZT52-C36
36 34 38
BZT52-C39
39 37 41
Dynamic Resistance Impedance
ZZT @ IZT
Ω mA
85 5
ZZK @ IZK
Ω mA
600 1
83 5 500 1
95 5 500 1
95 5 500 1
95 5 500 1
95 5 500 1
95 5 500 1
78 5 500 1
60 5 480 1
40 5 400 1
10 5 200 1
8 5 150 1
7 5 50 1
7 5 50 1
10 5 50 1
15 5 70 1
20 5 70 1
20 5 90 1
25 5 110 1
30 5 110 1
40 5 170 1
50 5 170 1
50 5 220 1
55 5 220 1
80 5 220 1
80 5 250 1
80 5 250 1
80 5 250 1
90 5 250 1
90 5 300 1
Max Reverse
Leakage Current
IR @ VR
nA V
100000 1
75000
1
50000
1
25000
1
15000
1
10000
1
5000
1
5000
1
100 0.8
100 1
100 2
100 3
100 5
100 6
100 7
100 7.5
100 8.5
100 9
100 10
100 11
100 12
100 14
100 15
100 17
100 18
100 20
100 22.5
100 25
100 27
100 29
Max. Zener
Current
IZM @ T A
mA
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
Package
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
SOD-123
NOTE:
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3. Zener Voltage (VZ) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30OC, from the diode body.
4. Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
current (IZT or IZK) is superimposed on IZT or IZK.
5. Surge Current (IR) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 5.
Part Number: BZT52-C2V4 - BZT52-C39
PAGE 2
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BZT52-C18 diode
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