MBR3035CT 반도체 회로 부품 판매점
Schottky Barrier Diodes
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 Sirectifier Semiconductors |
MBR3030CT thru MBR3045CT
High Tjm Low IRRM Schottky Barrier Diodes
AC A
C(TAB)
A
C
A
A=Anode, C=Cathode, TAB=Cathode
MBR3030CT
MBR3035CT
MBR3040CT
MBR3045CT
VRRM
V
30
35
40
45
VRMS
V
21
24.5
28
31.5
VDC
V
30
35
40
45
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=100oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VF
Maximum Forward
Voltage (Note 1)
IF=30A @TJ=125oC
IF=15A @TJ=25oC
IF=30A @TJ=25oC
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
@TJ=125oC
ROJC
CJ
TJ
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Maximum Ratings
30
200
10000
0.72
0.70
0.84
0.2
40
1.5
450
-55 to +150
-55 to +175
Unit
A
A
V/us
V
mA
oC/W
pF
oC
oC
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* RoHS compliant
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
* Mounting position: Any
P1
©2008 SIRECTIFIER All rights reserved,
www.sirectifier.com
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
MBR3030CT thru MBR3045CT
High Tjm Low IRRM Schottky Barrier Diodes
FIG.1 - FORWARD CURRENT DERATING CURVE
40
30
20
10 RESISTIVE OR
INDUCTIVE LOAD
025 50
75 100 125 150
CASE TEMPERATURE , C
175
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
300
250
200
150
100
50
0
1
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
2 5 10
20
50
NUMBER OF CYCLES AT 60Hz
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
TJ = 125 C
1.0
10
0.1
TJ = 25 C
0.01
0.001
0
20 40 60 80 100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
140
1.0
TJ = 25 C
PULSE WIDTH 300us
0.1 2% Duty cycle
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
1.0
10000
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25 C, f= 1MHz
100
0.1
1 4 10
REVERSE VOLTAGE , VOLTS
100
P2
©2008 SIRECTIFIER All rights reserved,
www.sirectifier.com
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
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제조업체: Sirectifier Semiconductors
( ss )
MBR3035CT diode
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[ MBR3035CT.PDF ]
[ MBR3035CT 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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