1N4771 반도체 회로 부품 판매점
9.1 Volt Temperature Compensated Zener Reference Diodes
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 Microsemi |
SCOTTSDALE DIVISION
1N4765 thru 1N4774A
9.1 Volt Temperature Compensated Zener
Reference Diodes
DESCRIPTION
The 1N4765 thru 1N4774A series of Zero-TC Reference Diodes provides a
selection of 9.1 V nominal voltages and temperature coefficients to as low
as 0.0005%/oC for minimal voltage change with temperature when operated
at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and
JANS also exist by using MQ, MX, MV or MSP respectively for part number
prefixes and high reliability screening. Microsemi also offers numerous
other Zener Reference Diode products for a variety of other voltages from
6.2 V to 200 V
APPEARANCE
DO-7
(DO-204AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
• JEDEC registered 1N935 thru 1N940 series
• Standard reference voltage of 9.1V +/- 5%
• Internal metallurgical bonds
• JANS Equivalent available via SCD
• Options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, and
JANS are available by adding MQ, MX, MV, or
MSP prefixes respectively to part numbers. For
example, designate “MX1N4769A” for a JANTX
screen
• Radiation Hardened devices available by
changing “1N” prefix to “RH”, e.g. RH4769A, RH
4774A, etc. Also consult factory for “RH” data
sheet brochure for other radiation hardened
reference diode products.
APPLICATIONS / BENEFITS
• Provides minimal voltage changes over a broad
temperature range for instrumentation and other
circuit designs requiring a voltage reference
• Temperature coefficient selections available
from 0.01%/ºC to 0.0005%/ºC
• Tight voltage tolerances available by adding
tolerance 1%, 2%, 3%, etc. after part number for
further identification, e.g. 1N4773A-2%,
1N4774A-1%, 1N4769-3%, 1N4769A-1%, etc.
• Flexible axial-leaded mounting terminals
• Nonsensitive to ESD per MIL-STD-750 Method
1020
MAXIMUM RATINGS
• Operating & StorageTemperature: -65oC to
+175oC
• DC Power Dissipation: 250 mW @ TL = 25oC
NOTE: For optimum voltage-temperature
stability, the test current IZT = 0.5 or 1.0 mA as
shown in Electrical Characteristics (less than 10
mW in dissipated power)
• Solder temperatures: 260 oC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed glass case with
DO-7 (DO-204AA) package
• TERMINALS: Tin-lead plated and solderable
per MIL-STD-750, Method 2026
• MARKING: Part number and cathode band
• POLARITY: Reference diode to be operated
with the banded end positive with respect to the
opposite end
• TAPE & REEL option: Standard per EIA-296
(add “TR” suffix to part number)
• WEIGHT: 0.2 grams.
• See package dimensions on last page
Copyright 2003
8-19-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
SCOTTSDALE DIVISION
1N4765 thru 1N4774A
9.1 Volt Temperature Compensated Zener
Reference Diodes
*ELECTRICAL CHARACTERISTICS @ 25oC
JEDEC
TYPE
NUMBER
ZENER
VOLTAGE
(Note 3)
ZENER
TEST
CURRENT
MAXIMUM
DYNAMIC
IMPEDANCE
MAXIMUM
REVERSE
CURRENT
IR @ 6 V
MAXIMUM
VOLTAGE
TEMPERATURE
STABILITY
(Note 2 & 3)
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COMPENSIATIONS
αVZ
VZ @ IZT
VOLTS
IZT
mA
ZZT
OHMS
IR
µA
∆VZT
mV
oC
%/oC
1N4765
9.1
0.5
350
10
68 0 to + 75
0.01
1N4765A
9.1
0.5
350
10
141 -55 to +100
0.01
1N4766
9.1
0.5
350
10
34 0 to + 75 0.005
1N4766A
9.1
0.5
350
10
70 -55 to +100 0.005
1N4767
9.1
0.5
350
10
14 0 to + 75 0.002
1N4767A
9.1
0.5
350
10
28 -55 to +100 0.002
1N4768
9.1
0.5
350
10
7
0 to + 75
0.001
1N4768A
9.1
0.5
350
10
14 -55 to +100 0.001
1N4769
9.1
0.5
350
10
3
0 to + 75
0.0005
1N4769A
9.1
0.5
350
10
7
-55 to +100
0.0005
1N4770
9.1
1.0
200
10
68 0 to + 75
0.01
1N4770A
9.1
1.0
200
10
141 -55 to +100
0.01
1N4771
9.1
1.0
200
10
34 0 to + 75 0.005
1N4771A
9.1
1.0
200
10
70 -55 to +100 0.005
1N4772
9.1
1.0
200
10
14 0 to + 75 0.002
1N4772A
9.1
1.0
200
10
28 -55 to +100 0.002
1N4773
9.1
1.0
200
10
7
0 to + 75
0.001
1N4773A
9.1
1.0
200
10
14 -55 to +100 0.001
1N4774
9.1
1.0
200
10
3
0 to + 75
0.005
1N4774A
9.1
1.0
200
10
7
-55 to +100
0.005
*JEDEC Registered Data.
NOTES:
1. Measured by superimposing IZ ac rms on IZ dc @ +25oC where IZ ac rms = 10% IZ dc.
2. Maximum allowable change between any two discrete temperatures over the specified temperature range.
3. Voltage measurements to be performed 15 seconds after application of dc current.
4. Designate Radiation Hardened devices with “RH” prefix instead of “1N”, i.e., RH4774A.
5. Consult factory for TX, TXV or JANS equivalent SCDs.
PACKAGE DIMENSIONS
All dimensions in: INCH
mm
Copyright 2003
8-19-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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