1N4783 반도체 회로 부품 판매점
8.5 Volt Temperature Compensated Zener Reference Diodes
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 Microsemi |
SCOTTSDALE DIVISION
1N4775 thru 1N4784A
8.5 Volt Temperature Compensated Zener
Reference Diodes
DESCRIPTION
The 1N4775 thru 1N4784A series of Zero-TC Reference Diodes provides a
selection of 8.5 V nominal voltages and temperature coefficients to as low
as 0.0005%/oC for minimal voltage change with temperature when operated
at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and
JANS also exist by using MQ, MX, MV or MSP respectively for part number
prefixes and high reliability screening. Microsemi also offers numerous
other Zener Reference Diode products for a variety of other voltages from
6.2 V to 200 V
APPEARANCE
DO-7
(DO-204AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
• JEDEC registered 1N4775 thru 1N4784A series
• Standard reference voltage of 8.5 V +/- 5%
• Internal metallurgical bonds
• Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example,
designate “MX1N4779A” for a JANTX, or
MV1N4784A for a JANTXV screen.
• Radiation Hardened devices available by changing
the “1N” prefix to “RH”, e.g. RH4779A, RH4784A,
etc. Also consult factory for “RH” data sheet
brochure for other radiation hardened reference
diode products.
APPLICATIONS / BENEFITS
• Provides minimal voltage changes over a broad
temperature range for instrumentation and other
circuit designs requiring a voltage reference
• Temperature coefficient selections available from
0.01%/ºC to 0.0005%/ºC
• Tight voltage tolerances available by adding
tolerance 1%, 2%, 3%, etc. after part number for
further identification, e.g. 1N4773A-2%, 1N4774A-
1%, 1N4769-3%, 1N4769A-1%, etc.
• Flexible axial-leaded mounting terminals
• Nonsensitive to ESD per MIL-STD-750 Method 1020
MAXIMUM RATINGS
• Operating & StorageTemperature: -65oC to +175oC
• DC Power Dissipation: 250 mW @ TL = 25oC
NOTE: For optimum voltage-temperature stability,
the test current IZT = 0.5 or 1.0 mA as shown in
Electrical Characteristics (less than 10 mW in
dissipated power)
• Solder temperatures: 260 oC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed glass case with DO-7
(DO-204AA) package
• TERMINALS: Tin-lead plated and solderable per
MIL-STD-750, Method 2026
• MARKING: Part number and cathode band
• POLARITY: Reference diode to be operated with
the banded end positive with respect to the
opposite end
• TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
• WEIGHT: 0.2 grams.
• See package dimensions on last page
Copyright 2003
8-19-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
SCOTTSDALE DIVISION
1N4775 thru 1N4784A
8.5 Volt Temperature Compensated Zener
Reference Diodes
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified
MAXIMUM
JEDEC
ZENER
ZENER
MAXIMUM
MAXIMUM
VOLTAGE
TEMPERATURE
EFFECTIVE
TYPE
VOLTAGE
TEST
DYNAMIC
REVERSE TEMPERATURE
RANGE
TEMPERATURE
NUMBER
(Note 5)
CURRENT IMPEDANCE CURRENT
STABILITY
COMPENSIATIONS
VZ @ IZT
VOLTS
IZT
mA
ZZT
OHMS
IR @ 6 V
IR
µA
(Note 3 & 5)
∆VZT
mV
oC
αVZ
%/oC
1N4775
8.5
0.5
200
10
64 0 to + 75
0.01
1N4775A
8.5
0.5
200
10
132 -55 to +100
0.01
1N4776
8.5
0.5
200
10
32 0 to + 75 0.005
1N4776A
8.5
0.5
200
10
66 -55 to +100 0.005
1N4777
8.5
0.5
200
10
13 0 to + 75 0.002
1N4777A
8.5
0.5
200
10
26 -55 to +100 0.002
1N4778
8.5
0.5
200
10
6
0 to + 75
0.001
1N4778A
8.5
0.5
200
10
13 -55 to +100 0.001
1N4779
8.5
0.5
200
10
3
0 to + 75
0.0005
1N4779A
8.5
0.5
200
10
7
-55 to +100
0.0005
1N4780
8.5
1.0
100
10
64 0 to + 75
0.01
1N4780A
8.5
1.0
100
10
132 -55 to +100
0.01
1N4781
8.5
1.0
100
10
32 0 to + 75 0.005
1N4781A
8.5
1.0
100
10
66 -55 to +100 0.005
1N4782
8.5
1.0
100
10
13 0 to + 75 0.002
1N4782A
8.5
1.0
100
10
26 -55 to +100 0.002
1N4783
8.5
1.0
100
10
6
0 to + 75
0.001
1N4783A
8.5
1.0
100
10
13 -55 to +100 0.001
1N4784
8.5
1.0
100
10
3
0 to + 75
0.0005
1N4784A
8.5
1.0
100
10
7
-55 to +100
0.0005
*JEDEC Registered Data.
NOTES:
1. Designate Radiation Hardened devices with “RH” prefix instead of “1N,” i.e., RH4784A. Consult factory for TX, TXV or
JANS equivalent SCDs.
2. Measured by superimposing IZ ac rms on IZ dc @ 25oC where IZ ac rms = 10% IZ dc.
3. Maximum allowable change between any two discrete temperatures over the specified temperature change.
4. When ordering devices with a tighter tolerance than specified, use a nominal center voltage of 8.4 volts.
5. Voltage measurements to be performed 15 seconds after application of dc current.
PACKAGE DIMENSIONS
All dimensions in: INCH
mm
Copyright 2003
8-19-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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1N4783 diode
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