1N3881 반도체 회로 부품 판매점
Silicon Fast Recovery Diode
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 GeneSiC |
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 400 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N3879 thru 1N3883R
VRRM = 50 V - 400 V
IF = 6 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
VRRM
VRMS
VDC
IF
TC ≤ 100 °C
50 100 200 300 400 V
35 70 140 210 280 V
50 100 200 300 400 V
6 6 6 6 6A
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
IF,SM TC = 25 °C, tp = 8.3 ms
90
90
90
90 90
Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
Diode forward voltage
Reverse current
VF IF = 6 A, Tj = 25 °C
1.4
1.4
1.4
1.4
1.4 V
IR
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 150 °C
15
3
15
3
15
3
15 15 μA
3 3 mA
Recovery Time
Maximum reverse recovery
time
TRR
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
200
200
200
200 200 nS
Thermal characteristics
Thermal resistance, junction
- case
RthJC
2.5 2.5 2.5 2.5 2.5 °C/W
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1
1N3879 thru 1N3883R
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
2
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PDF 파일 내의 페이지 : 총 3 페이지
제조업체: GeneSiC
( genesic )
1N3881 diode
데이터시트 다운로드 :
[ 1N3881.PDF ]
[ 1N3881 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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