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Fairchild Semiconductor |
Zeners
1N957B - 1N991B
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
PD Power Dissipation
@ TL ≤ 75°C, Lead Length = 3/8”
500
Derate above 75°C
4.0
TJ, TSTG Operating and Storage Temperature Range -65 to +200
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Units
mW
mW/°C
°C
Tolerance = 5%
DO-35 Glass case
COLOR BAND DENOTES CATHODE
Electrical Characteristics TA=25°C unless otherwise noted
Device
1N957B
1N958B
1N959B
1N960B
1N961B
Min.
6.46
7.125
7.79
8.645
9.5
VZ (Volts) (Note 1)
Typ. Max.
6.8 7.14
7.5 7.875
8.2 8.61
9.1 9.555
10 10.5
@ IZ
(mA)
18.5
16.5
15
14
12.5
ZZ (Ω) (Note 2)
ZZ @ IZ
ZZK @ IZK
Ω mA
4.5 700 1.0
5.5 700 0.5
6.5 700 0.5
7.5 700 0.5
8.5 700 0.25
1N962B
1N963B
1N964B
1N965B
1N966B
10.45 11 11.55 11.5 9.5 700 0.25
11.4 12 12.6 10.5 11.5 700 0.25
12.35 13 13.65 9.5
13 700 0.25
14.25 15 15.75 8.5
16 700 0.25
15.2 16 16.8 7.8
17 700 0.25
1N967B
1N968B
1N969B
1N970B
1N971B
17.1
19
20.9
22.8
25.652
18
20
22
24
27
18.9
21
23.1
25.2
28.35
7.0
6.2
5.6
5.2
4.6
21 750 0.25
25 750 0.25
29 750 0.25
33 750 0.25
41 750 0.25
1N972B
1N973B
1N974B
1N975B
1N976B
8.5 30 31.5 4.2
31.35 33 34.65 3.8
34.2 36 37.8 3.4
37.05 39 40.95 3.2
40.85 43 45.15 3.0
49 1000 0.25
58 1000 0.25
70 1000 0.25
80 1000 0.25
93 1500 0.25
1N977B
1N978B
1N979B
1N980B
1N981B
44.65 47 49.35 2.7
48.45 51 53.55 2.5
53.2 56 58.8 2.2
58.9 62 65.1 2.0
64.6 68 71.4 1.8
105 1500 0.25
125 1500 0.25
150 2000 0.25
185 2000 0.25
230 2000 0.25
IR @ VR
µA Volts
150 5.2
75 5.7
50 6.2
25 6.9
10 7.6
5 8.4
5 9.1
5 9.9
5 11.4
5 12.2
5 13.7
5 15.2
5 16.7
5 18.2
5 20.6
5 22.8
5 25.1
5 27.4
5 29.7
5 32.7
5 35.8
5 38.8
5 42.6
5 47.1
5 51.7
IZM (mA)
(Note 3)
47
42
38
35
32
28
26
24
21
19
17
15
14
13
11
10
9.2
8.5
7.8
7.0
6.4
5.9
5.4
4.9
4.5
©2004 Fairchild Semiconductor Corporation
1N957B - 1N991B, Rev. E2
Electrical Characteristics (Continued) TA=25°C unless otherwise noted
Device
1N982B
1N983B
1N984B
1N985B
1N986B
Min.
71.25
77.9
86.45
95
104.5
VZ (Volts) (Note 1)
Typ. Max.
75 78.75
82 86.1
91 95.55
100 105
110 115.5
@ IZ
1.7
1.5
1.4
1.3
1.1
ZZ (Ω) (Note 2)
ZZ @ IZ
ZZK @ IZK
Ω mA
270 2000 0.25
330 3000 0.25
400 3000 0.25
500 3000 0.25
750 4000 0.25
1N987B
1N988B
1N989B
1N990B
1N991B
114 120 126 1.0
123.5 130 136.5 0.95
142.5 150 157.5 0.85
152 160 168 0.80
171 180 189 0.68
900
1100
1500
1700
2200
4500
5000
6000
6500
7100
0.25
0.25
0.25
0.25
0.25
IR @ VR
µA Volts
5 56.0
5 62.2
5 69.2
5 76.0
5 83.6
5 91.2
5 98.8
5 114
5 121.6
5 136.8
IZM (mA)
(Note 3)
4.1
3.7
3.3
3.0
2.7
2.5
2.3
2.0
1.9
1.7
Notes:
1. Zener Voltage (VZ) Measurement
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8” lead length.
2. Zener Impedance (ZZ) Derivation
ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac
frequency = 60Hz.
3. Maximum Zener Current Ratings (IZM)
The maximum current handling capability on a worst case basis is limited by the actual zener voltage at the operation point and the power derating curve.
©2004 Fairchild Semiconductor Corporation
1N957B - 1N991B, Rev. E2
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