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Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
1 to 3 Watt DO-41 Surmetic 30
Zener Voltage Regulator Diodes
GENERAL DATA APPLICABLE TO ALL SERIES IN
THIS GROUP
1 to 3 Watt Surmetic 30
Silicon Zener Diodes
. . . a complete series of 1 to 3 Watt Zener Diodes with limits and operating characteristics
that reflect the superior capabilities of silicon-oxide-passivated junctions. All this in an
axial-lead, transfer-molded plastic package offering protection in all common environmen-
tal conditions.
Specification Features:
• Surge Rating of 98 Watts @ 1 ms
• Maximum Limits Guaranteed On Up To Six Electrical Parameters
• Package No Larger Than the Conventional 1 Watt Package
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
POLARITY: Cathode indicated by color band. When operated in zener mode, cathode
will be positive with respect to anode
MOUNTING POSITION: Any
WEIGHT: 0.4 gram (approx)
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seoul, Korea
GENERAL
DATA
1–3 WATT
DO-41
SURMETIC 30
1 TO 3 WATT
ZENER REGULATOR
DIODES
3.3–400 VOLTS
CASE 59-03
DO-41
PLASTIC
MAXIMUM RATINGS
Rating
DC Power Dissipation @ TL = 75°C
Lead Length = 3/8″
Derate above 75°C
DC Power Dissipation @ TA = 50°C
Derate above 50°C
Operating and Storage Junction Temperature Range
Symbol
PD
PD
TJ, Tstg
Value
3
24
1
6.67
– 65 to +200
Unit
Watts
mW/°C
Watt
mW/°C
°C
5
L = LEAD LENGTH
L = 1/8″
TO HEAT SINK
4
L = 3/8″
3
2 L = 1″
1
0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
Motorola TVS/Zener Device Data
1–3 Watt DO-41 Surmetic 30 Data Sheet
6-43
GENERAL DATA — 1-3 WATT DO-41 SURMETIC 30
30
20 D =0.5
10
7 0.2
5
0.1
3
2 0.05
0.02
1
0.7 0.01
0.5 D = 0
0.3
0.0001 0.0002
PPK t1
t2
DUTY CYCLE, D =t1/t2
0.0005
0.001
NOTE: BELOW 0.1 SECOND, THERMAL
RESPONSE CURVE IS APPLICABLE
TO ANY LEAD LENGTH (L).
SINGLE PULSE ∆TJL = θJL (t)PPK
REPETITIVE PULSES ∆TJL = θJL (t,D)PPK
0.002
0.005 0.01 0.02
0.05 0.1
t, TIME (SECONDS)
0.2
0.5 1
2
5 10
Figure 2. Typical Thermal Response L, Lead Length = 3/8 Inch
1K
RECTANGULAR
500 NONREPETITIVE
WAVEFORM
300 TJ = 25°C PRIOR
200 TO INITIAL PULSE
100
50
30
20
10
0.1 0.2 0.3 0.5
1 2 3 5 10 20 30 50 100
PW, PULSE WIDTH (ms)
Figure 3. Maximum Surge Power
3
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0005
0.0003
1
TA = 125°C
TA = 125°C
2 5 10 20 50 100 200 400 1000
NOMINAL VZ (VOLTS)
Figure 4. Typical Reverse Leakage
APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom-
mended:
Lead Temperature, TL, should be determined from:
TL = θLA PD + TA
θLA is the lead-to-ambient thermal resistance (°C/W) and
PD is the power dissipation. The value for θLA will vary and
depends on the device mounting method. θLA is generally
30–40°C/W for the various clips and tie points in common
use and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the mea-
sured value of TL, the junction temperature may be deter-
mined by:
TJ = TL + ∆TJL
1–3 Watt DO-41 Surmetic 30 Data Sheet
6-44
∆TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for a train of
power pulses (L = 3/8 inch) or from Figure 10 for dc power.
∆TJL = θJL PD
For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ (∆TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
∆V = θVZ ∆TJ
θVZ, the zener voltage temperature coefficient, is found from
Figures 5 and 6.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Data of Figure 2 should not be used to compute surge capa-
bility. Surge limitations are given in Figure 3. They are lower
than would be expected by considering only junction tempera-
ture, as current crowding effects cause temperatures to be ex-
tremely high in small spots resulting in device degradation
should the limits of Figure 3 be exceeded.
Motorola TVS/Zener Device Data
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