1N5259 반도체 회로 부품 판매점
SILICON ZENER DIODES
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 Digitron Semiconductors |
1N5221-1N5281
High-reliability discrete products
and engineering services since 1977
SILICON ZENER DIODES
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. Part numbers listed indicate a tolerance of ±20% with guaranteed limits on only, VZ, IR and
VF.
Devices with guaranteed limits on all six parameters are indicated by suffix A for ±10% tolerance, suffix B for a ±5% tolerance, suffix C for a 2% tolerance and suffix D for a 1%
tolerance.
MAXIMUM RATINGS
Operating and Storage Temperature
DC Power Dissipation
Power Derating
Forward Voltage @ 200mA
-65°C to + 200°C
500 mW
3.33 mW/C° above 25°C
1.1 Volts
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Part Number (1)
Nominal
Zener Voltage
VZ @ IZT
Volts
Test
Current
IZT
mA
Max Zener Impedance
A&B Suffix Only(2)
ZZT @ IZT
Ohms
ZZT @ IZK=0.25mA
Ohms
1N5221
1N5222
1N5223
1N5224
1N5225
1N5226
1N5227
1N5228
1N5229
1N5230
1N5231
1N5232
1N5233
1N5234
1N5235
1N5236
1N5237
1N5238
1N5239
1N5240
1N5241
1N5242
1N5243
1N5244
1N5245
1N5246
1N5247
1N5248
1N5249
1N5250
1N5251
1N5252
1N5253
1N5254
1N5255
1N5256
1N5257
1N5258
1N5259
1N5260
2.4 20 30
2.5 20 30
2.7 20 30
2.8 20 30
3.0 20 29
3.3 20 28
3.6 20 24
3.9 20 23
4.3 20 22
4.7 20 19
5.1 20 17
5.6 20 11
6.0 20 7.0
6.2 20 7.0
6.8 20 5.0
7.5 20 6.0
8.2 20 8.0
8.7 20 8.0
9.1 20 10
10 20 17
11 20 22
12 20 30
13 9.5 13
14 9.0 15
15 8.5 16
16 7.8 17
17 7.4 19
18 7.0 21
19 6.6 23
20 6.2 25
22 5.6 29
24 5.2 33
25 5.0 35
27 4.6 41
28 4.5 44
30 4.2 49
33 3.8 58
36 3.4 70
39 3.2 80
43 3.0 93
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
Max Reverse Leakage Current
A, B, & D Suffix
Only
IR VR
µA @ Volts
A B,C &D
Non Suffix
IR @ VR Used For
Suffix A
µA
100 0.95
100 0.95
75 0.95
75 0.95
50 0.95
25 0.95
15 0.95
10 0.95
5.0 0.95
5.0 1.9
5.0 1.9
5.0 2.9
5.0 3.3
5.0 3.8
3.0 4.8
3.0 5.7
3.0 6.2
3.0 6.2
3.0 6.7
3.0 7.6
2.0 8.0
1.0 8.7
0.5 9.4
0.1 9.5
0.1 10.5
0.1 11.4
0.1 12.4
0.1 13.3
0.1 13.3
0.1 14.3
0.1 16.2
0.1 17.1
0.1 18.1
0.1 20
0.1 20
0.1 22
0.1 24
0.1 26
0.1 29
0.1 31
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
200
200
150
150
100
100
100
75
50
50
50
50
50
50
30
30
30
30
30
30
30
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Max Zener Voltage
Temp. Coeff.
(A&B Suffix Only)
αVZ (%/°C)(3)
-0.085
-0.085
-0.080
-0.080
-0.075
-0.070
-0.065
-0.060
±0.055
±0.030
±0.030
+0.038
+0.038
+0.045
+0.050
+0.058
+0.062
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
+0.083
+0.084
+0.085
+0.086
+0.086
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
Rev. 20120712
High-reliability discrete products
and engineering services since 1977
1N5221-1N5281
SILICON ZENER DIODES
Part Number (1)
Nominal
Zener Voltage
VZ @ IZT
Volts
Test
Current
IZT
mA
Max Zener Impedance
A&B Suffix Only(2)
ZZT @ IZT
Ohms
ZZT @ IZK=0.25mA
Ohms
IR
µA
Max Reverse Leakage Current
A, B, & D Suffix
Only
VR
@ Volts
Non Suffix
IR @ VR Used For
Suffix A
µA
A B,C&D
1N5261
47
2.7 105
1000
0.1 34
36
1N5262
51
2.5 125
1100
0.1 37
39
1N5263
56
2.2 150
1300
0.1 41
43
1N5264
60
2.1 170
1400
0.1 44
46
1N5265
62
2.0 185
1400
0.1 45
47
1N5266
68
1.8 230
1600
0.1 49
52
1N5267
75
1.7 270
1700
0.1 53
56
1N5268
82
1.5 330
2000
0.1 59
62
1N5269
87
1.4 370
2200
0.1 65
68
1N5270
91
1.4 400
2300
0.1 66
69
1N5271
100 1.3 500
2600
0.1 72
76
1N5272
110 1.1 750
3000
0.1 80
84
1N5273
120 1.0 900
4000
0.1 86
91
1N5274
130 0.95 1100
4500
0.1 94
99
1N5275
140 0.90 1300
4500
0.1 101
106
1N5276
150 0.85 150
5000
0.1 108
114
1N5277
160 0.80 170
5500
0.1 116
122
1N5278
170 0.74 190
5500
0.1 123
129
1N5279
180 0.68 2200
6000
0.1 130
137
1N5280
190 0.66 2400
6500
0.1 137
144
1N5281
200 0.65 2500
7000
0.1 144
152
NOTE 1: The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with a 3/8” minimum lead length from the case.
NOTE 2: The zener impedance is derived from the 60HZ ac voltage, which results when an ac current having an r.m.s. value equal to 10% of the DC zener current
(IZT or I ZK) is superimposed on IZT or I ZK. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve, thereby eliminating unstable units.
NOTE 3: Temperature coefficient (αVZ). Test conditions for temperature coefficient are a follows:
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
a. IZT = 7.5 mA, T1 = 25°C,
T2 = 125°C (1N5221A, thru 1N5242A, B.)
b. IZT = Rated IZT, T1 = 25°C,
T2 = 125°C (1N5243A, B thru 1N5281A, B.)
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.
Max Zener Voltage
Temp. Coeff.
(A&B Suffix Only)
αVZ (%/°C)(3)
+0.095
+0.096
+0.096
+0.097
+0.097
+0.097
+0.098
+0.098
+0.099
+0.099
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
+0.110
Rev. 20120712
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제조업체: Digitron Semiconductors
( digitrons )
1N5259 diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
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[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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