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PDF CTNS-6306S Data sheet ( Hoja de datos )
| Número de pieza | CTNS-6306S | |
| Descripción | Fast Recovery and High Power Diode | |
| Fabricantes | Sanken | |
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VRM = 600 V, IF(AV) = 30 A, trr = 50 ns(max.)
Fast Recovery and High Power Diode
CTNS-6306S
Preliminary
Features
The CTNS-6306S is a high power diode of the
low-noise and low loss which realize a peak reverse
voltage of 600 V. Typical forward voltage drop of 1.15
V is realized by optimizing the relationship of trade-off
between VF and trr. It has the characteristics suit for PFC
circuit of DCM and CRM.
The low thermal resistance package achieves high
performance in terms of heat dissipation.
VRM------------------------------------------------------ 600 V
VF------------------------------------ 1.3 V max. (IF = 15 A)
IF(AV)------------------------------------------------------- 30 A
trr----------------------------------------------------50 ns max.
(IF = 100 mA, IRP = 200 mA, 75 % of R.P.)
Package
TO-247-3L
(1) (2) (3)
AKA
Applications
For PFC Circuit (DCM,CRM)
For Large Current Secondary Side Rectifier
For DC-DC Converter, etc.
(4)
K
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA is 25 °C
Parameter
Symbol
Peak Repetitive Reverse
Voltage
VRM
Average Forward Current
IF(AV)
Surge Forward Current
IFSM
I2t Limiting Value
I2t
Junction Temperature
Storage Temperature
Tj
Tstg
Rating
600
30
150
112.5
−40 to 150
−40 to 150
Unit Notes
V
A
A
10 ms
Half sinewave, one shot
A2s 1 ms ≤ t ≤10 ms
°C
°C
Electrical Characteristics
Unless otherwise specified, TA is 25 °C
Parameter
Symbol
Test Conditions
Min. Typ. Max. Unit
Forward Voltage Drop
VF IF = 15 A
― 1.15 1.3
V
Reverse Leakage Current
IR VR = VRM
― ― 100 µA
Reverse Leakage Current
Under High Temperature
H･IR
VR = VRM, Tj = 150 °C
― ― 10 mA
Reverse Recovery Time
IF = IRP = 100 mA,
trr1 Tj = 25 °C,
90 % recovery point
IF = 100mA, IRP = 200 mA,
trr2 Tj = 25 °C,
75 % recovery point
― ― 100 ns
― ― 50 ns
Thermal Resistance*
Rth(j-c)
― ― 1.5 °C/W
* Rth(j-c) is thermal resistance between junction and case. Case temperature (TC) is measured at the under of the screw
hole of case.
CTNS-6306S-DS Rev.0.2
Mar. 11, 2014
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp/en/
1
1 page  
CTNS-6306S
Package Outline
TO-247-3L
Preliminary
SYMBOL
A
A1
A2
b
b1
b2
c
D
D1
E
E1
E2
e
L
L1
φP
Q
S
MIN
4.82
2.23
1.87
1.09
1.81
2.83
0.59
20.63
17.26
15.75
13.06
4.32
19.81
3.74
3.47
5.53
NOM
5.02
2.41
2.04
1.27
2.10
3.10
0.71
21.07
17.63
15.94
13.26
4.58
5.45 BSC
20.19
4.07
3.60
5.90
6.15 BSC
MAX
5.22
2.60
2.20
1.45
2.30
3.29
0.82
21.51
18.00
16.13
13.46
4.83
20.57
4.39
3.73
6.26
NOTES:
1) Dimension is in millimeters
2) Pb-free. Device composition compliant with the RoHS directive
Marking Diagram
NS6306
YMDD#B
(1) (2) (3)
Part Number
Lot Number
Y is the Last digit of year (0 to 9)
M is the Month (1 to 9, O ,N or D)
DD is the Date (two digit of 01 to 31)
# is the last digit of wafer lot number
B expresses Pb free pins
CTNS-6306S-DS Rev.0.2
Mar. 11, 2014
SANKEN ELECTRIC CO.,LTD.
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CTNS-6306S.PDF ] | |
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