1N4737A 반도체 회로 부품 판매점
Voltage regulator diodes
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 NXP Semiconductors |
1N4728A to 1N4749A
Voltage regulator diodes
Rev. 02 — 30 October 2009
Product data sheet
1. Product profile
1.1 General description
Low voltage regulator diodes in hermetically sealed small SOD66 (DO-41) glass
packages.
The series consists of 22 types with nominal working voltages from 3.3 to 24 V.
1.2 Features
I Total power dissipation:
max. ≤ 1000 mW
I Working voltage range:
nom. 3.3 V to 24 V
I Tolerance series: ±5 %
I Small hermetically sealed glass
package
1.3 Applications
I Low voltage stabilizers
1.4 Quick reference data
Table 1.
Symbol
VF
Ptot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
IF = 200 mA
Min Typ Max Unit
- - 1.2 V
- - 1000 mW
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking band indicates the cathode.
Simplified outline
[1]
ka
Graphic symbol
12
006aaa152
NXP Semiconductors
1N4728A to 1N4749A
Voltage regulator diodes
3. Ordering information
4. Marking
Table 3. Ordering information
Type number
Package
Name
Description
1N4728A to
1N4749A[1]
-
hermetically sealed glass package; axial leaded;
2 leads
[1] The series consists of 22 types with nominal working voltages from 3.3 V to 24 V.
Version
SOD66
Table 4. Marking codes
Type number
1N4728A to 1N4749A
Marking code
The diodes are type branded.
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IF forward current
IZ working current
-
-
IZSM non-repetitive peak reverse
current
Ptot
total power dissipation
Tamb = 50 °C
Tj junction temperature
Tstg storage temperature
-
-
−65
−65
Max
500
see
Table 8
see
Table 8
1000
+200
+200
Unit
mA
mW
°C
°C
1N4728A_SER_2
Product data sheet
Rev. 02 — 30 October 2009
© NXP B.V. 2009. All rights reserved.
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1N4737A diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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