PDF CMPD2003S Data sheet ( Hoja de datos )

Número de pieza	CMPD2003S
Descripción	SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE
Fabricantes	Central Semiconductor Corp
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No Preview Available ! CMPD2003 É' CMPD2003C ^ CMPD2003S CMPD2004 É' CMPD2004C CMPD2004S SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE CentralTM Semiconductor Corp. DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. SOT-23 CASE The following configurations are available: CMPD2003 CMPD2003C CMPD2003S CMPD2004 CMPD2004C CMPD2004S SINGLE DUAL, COMMON CATHODE DUAL, IN SERIES SINGLE DUAL, COMMON CATHODE DUAL, IN SERIES MARKING CODE: A82 MARKING CODE: C3C MARKING CODE: C3S MARKING CODE: D53 MARKING CODE: DB7 MARKING CODE: DB6 MAXIMUM RATINGS (TA=25°C) Continuous Reverse Voltage Peak RepetitiveReverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 ms Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ,Tstg QJA CMPD2003 CMPD2004 CMPD2003C CMPD2004C CMPD2003S CMPD2004S 200 240 250 300 200 200 250 225 625 625 4000 4000 1000 1000 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL BVR IR TEST CONDITIONS IR=100mA VR=200V CMPD2003 CMPD2003C CMPD2003S MIN MAX 250 100 CMPD2004 CMPD2004C CMPD2004S MIN MAX 300 - 170 UNITS V V mA mA mA mA mA mW °C °C/W UNIT V nA 1 page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
CMPD2003	HIGH VOLTAGE SWITCHING DIODE	Central Semiconductor Corp
CMPD2003	SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE	Central Semiconductor Corp
CMPD2003-1	SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE	Central Semiconductor Corp
CMPD2003C	SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE	Central Semiconductor Corp

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