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Número de pieza | SDW81F1C | |
Descripción | LED | |
Fabricantes | Seoul Semiconductor | |
Logotipo | ||
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Z Power Chip on board – ZC series
SDWx1F1C (SDW01F1C, SDW81F1C, SDW91F1C)
Product Data Sheet
SDWx1F1C – Chip on Board
Product Brief
Description
• The ZC series are LED arrays which
provide High Flux and High Efficacy.
• It is especially designed for easy
assembly of lighting fixtures by
eliminating reflow soldering process.
• It‘s thermal management is better than
other power LED solutions with wide
Metal area.
• ZC series are ideal light sources for
General Lighting applications including
Replacement Lamps, Industrial &
Commercial Lightings and other high
Lumen required applications.
LM-80
RoHS
MacAdam
3-Step
Features and Benefits
• Size 13.5mm * 13.5mm
• Power dissipation 6.3 ~ 18.4W
• Wide CCT range with CRI70~90
• Forward VF 34.8V
• Maximum Current 460mA
• MacAdam 3-step binning
• Uniformed Shadow
• Excellent Thermal management
• RoHS compliant
Key Applications
• Commercial – Downlight
• Replacement lamps – Bulb, PAR, MR16
• Industrial
• Residential
Table 1. Product Selection Table
Part Number
SDW01F1C
SDW81F1C
SDW91F1C
Color
Cool White
Neutral White
Cool White
Neutral White
Warm White
Neutral White
Warm White
1
CCT [K]
Min.
Typ.
4,700
-
3,700
-
4,700
-
3,700
-
2,600
-
3,700
-
2,600
-
Max.
6,000
4,700
6,000
4,700
3,700
4,200
3,700
www.seoulsemicon.com
1 page Product Data Sheet
SDWx1F1C – Chip on Board
Product Performance & Characterization Guide
Table 4. Absolute Maximum Characteristics, Tj=25ºC
Parameter
Symbol
Min.
Value
Typ.
Max.
Forward Current
IF - 0.18 0.46
Power Dissipation
Pd - 6.3 18.4
Junction Temperature
Tj
-
- 140
Operating Temperature
Topr
-40
-
85
Surface Temperature
TS
-
- 100
Storage Temperature Tstg -40 - 100
Thermal resistance (J to S) [1]
RθJ-S
-
1.68
-
ESD Sensitivity(HBM)
-
Class 3A JESD22-A114-E
Unit
A
W
ºC
ºC
ºC
ºC
K/W
Notes :
(1) Thermal Resistance : RθJ-S (Junction to Ts point)
5 www.seoulsemicon.com
5 Page Characteristics Graph
Product Data Sheet
SDWx1F1C – Chip on Board
Fig 9. Junction Temperature vs. CIE X, Y Shift, IF=180mA (CRI70)
0.03
CIE X(5000K)
0.02 CIE Y(5000K)
0.01
0.00
-0.01
-0.02
-0.03
20
40 60 80 100 120 140
Jinction Temperature(oC)
Fig 10. Junction Temperature vs. CIE X, Y Shift, IF=180mA (CRI90)
0.03
CIE X(3000K)
CIE Y(3000K)
0.02
0.01
0.00
-0.01
-0.02
-0.03
20
40 60 80 100 120
Junction Temperature(oC)
140
11 www.seoulsemicon.com
11 Page |
Páginas | Total 27 Páginas | |
PDF Descargar | [ Datasheet SDW81F1C.PDF ] |
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