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STMicroelectronics |
Features
■ Peak pulse power:
– 600 W (10/1000 μs)
– 4 kW (8/20 µs)
■ Stand off voltage range: from 5 V to 188 V
■ Unidirectional and bidirectional types
■ Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
■ Operating Tj max: 150 °C
■ High power capability at Tj max:
– 515 W (10/1000 µs)
■ JEDEC registered package outline
Complies with the following standards
■ IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
■ IEC 61000-4-5
■ MIL STD 883G, method 3015-7 Class 3B:
– 25 kV HBM (human body model)
■ Resin meets UL 94, V0
■ MIL-STD-750, method 2026 soldererability
■ EIA STD RS-481 and IEC 60286-3 packing
■ IPC 7531 footprint
SMBJ
Transil™
A
K
Unidirectional
Bidirectional
SMB
(JEDEC DO-214AA)
Description
The SMBJ Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2, and
MIL STD 883, method 3015, and electrical over
stress according to IEC 61000-4-4 and 5. These
devices are more generally used against surges
below 600 W (10/1000 μs).
Planar technology makes these devices suitable
for high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time.
SMBJ are packaged in SMB (SMB footprint in
accordance with IPC 7531 standard).
October 2010
TM: Transil is a trademark of STMicroelectronics
Doc ID 5616 Rev 10
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www.st.com
10
Characteristics
1 Characteristics
SMBJ
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
PPP Peak pulse power dissipation (1)
Tj initial = Tamb
Tstg Storage temperature range
Tj Operating junction temperature range
TL Maximum lead temperature for soldering during 10 s.
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Value
600
-65 to +150
-55 to +150
260
Unit
W
°C
°C
°C
Table 2. Thermal resistances
Symbol
Parameter
Rth(j-l)
Rth(j-a)
Junction to leads
Junction to ambient on recommended pad layout
Value
20
100
Unit
°C/W
°C/W
Figure 1. Electrical characteristics - definitions
II
Symbol Parameter
VRM Stand-off voltage
Unidirectional IF
IPP
VBR Breakdown voltage
VCL Clamping voltage
IRM Leakage current @ VRM
VCLVBR VRM
VF
V
VCLVBR VRM
IR
IRM
V
IPP Peak pulse current
αT Voltage temperature coefficient
IRM
IR
IRM VRMVBR VCL
IR
VF Forward voltage drop
RD Dynamic resistance
IPP
Bidirectional
IPP
Figure 2.
Pulse definition for electrical characteristics
% Ipp
100
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
tr
tp
t
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