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Número de pieza | MT29C4G96MAZAPCJG-5IT | |
Descripción | NAND Flash and Mobile LPDDR | |
Fabricantes | Micron Technology | |
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Hay una vista previa y un enlace de descarga de MT29C4G96MAZAPCJG-5IT (archivo pdf) en la parte inferior de esta página. Total 70 Páginas | ||
No Preview Available ! Micron Confidential and Proprietary
Preliminary‡
168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP
Features
NAND Flash and Mobile LPDDR
168-Ball Package-on-Package (PoP) MCP
Combination Memory (TI OMAP™)
MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT,
MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,
MT29C4G96MAZAPCJG-6 IT, MT29C8G96MAZAPDJV-5 IT,
MT29C8G96MAZAPDJV-6 IT
Features
• Micron® NAND Flash and LPDDR components
• RoHS-compliant, “green” package
• Separate NAND Flash and LPDDR interfaces
• Space-saving multichip package/package-on-package
combination
• Low-voltage operation (1.70–1.95V)
• Industrial temperature range: –40°C to +85°C
NAND Flash-Specific Features
Organization
• Page size
– x8: 2112 bytes (2048 + 64 bytes)
– x16: 1056 words (1024 + 32 words)
• Block size: 64 pages (128K + 4K bytes)
Mobile LPDDR-Specific Features
• No external voltage reference required
• No minimum clock rate requirement
• 1.8V LVCMOS-compatible inputs
• Programmable burst lengths
• Partial-array self refresh (PASR)
• Deep power-down (DPD) mode
• Selectable output drive strength
• STATUS REGISTER READ (SRR) supported1
Notes: 1. Contact factory for remapped SRR output.
2. For physical part markings, see Part Number-
ing Information (page 2).
Figure 1: PoP Block Diagram
NAND Flash
Power
NAND Flash
Device
LPDRAM Power
LPDRAM
Device
NAND Flash
Interface
LPDRAM
Interface
PDF: 09005aef83ba4387
168ball_nand_lpddr_j42p_j4z2_j4z3_omap.pdf – Rev. F 03/10
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.
1 page Micron Confidential and Proprietary
Preliminary
168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP
Standard Mode Register ................................................................................................................................. 171
Burst Length ............................................................................................................................................. 171
Burst Type ................................................................................................................................................ 172
CAS Latency ............................................................................................................................................. 173
Operating Mode ........................................................................................................................................ 174
Extended Mode Register ................................................................................................................................ 175
Temperature-Compensated Self Refresh ................................................................................................... 175
Partial-Array Self Refresh .......................................................................................................................... 176
Output Drive Strength ............................................................................................................................... 176
Status Read Register ...................................................................................................................................... 177
Bank/Row Activation ..................................................................................................................................... 179
READ Operation ............................................................................................................................................ 180
WRITE Operation .......................................................................................................................................... 191
PRECHARGE Operation ................................................................................................................................. 203
Auto Precharge .............................................................................................................................................. 203
Concurrent Auto Precharge ....................................................................................................................... 204
AUTO REFRESH Operation ............................................................................................................................ 209
SELF REFRESH Operation ............................................................................................................................. 210
Power-Down ................................................................................................................................................. 211
Deep Power-Down ................................................................................................................................... 213
Clock Change Frequency ............................................................................................................................... 215
Revision History ............................................................................................................................................ 216
Rev. F, Preliminary – 03/10 ........................................................................................................................ 216
Rev. E, Preliminary – 02/10 ........................................................................................................................ 216
Rev. D, Preliminary – 01/10 ........................................................................................................................ 216
Rev. C, Preliminary – 12/09 ........................................................................................................................ 216
Rev. B, Preliminary – 10/09 ........................................................................................................................ 216
Rev. A, Preliminary – 7/09 .......................................................................................................................... 217
PDF: 09005aef83ba4387
168ball_nand_lpddr_j42p_j4z2_j4z3_omap.pdf – Rev. F 03/10
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
5 Page Micron Confidential and Proprietary
Preliminary
168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP
MCP General Description
MCP General Description
Micron package-on-package (PoP) MCP products combine NAND Flash and Mobile
LPDRAM devices in a single MCP. These products target mobile applications with low-
power, high-performance, and minimal package-footprint design requirements. The
NAND Flash and Mobile LPDRAM devices are also members of the Micron discrete mem-
ory products portfolio.
The NAND Flash and Mobile LPDRAM devices are packaged with separate interfaces
(no shared address, control, data, or power balls). This bus architecture supports an op-
timized interface to processors with separate NAND Flash and Mobile LPDRAM buses.
The NAND Flash and Mobile LPDRAM devices have separate core power connections
and share a common ground (that is, VSS is tied together on the two devices).
The bus architecture of this device also supports separate NAND Flash and Mobile
LPDRAM functionality without concern for device interaction.
PDF: 09005aef83ba4387
168ball_nand_lpddr_j42p_j4z2_j4z3_omap.pdf – Rev. F 03/10
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
11 Page |
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MT29C4G96MAZAPCJG-5IT | NAND Flash and Mobile LPDDR | Micron Technology |
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