|
|
PDF TPCA8109 Data sheet ( Hoja de datos )
| Número de pieza | TPCA8109 | |
| Descripción | Silicon P Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TPCA8109 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
TPCA8109
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPCA8109
Lithium Ion Battery Applications
Power Management Switch Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation (Tc=25°C)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
PD
EAS
IAR
Tch
Tstg
−30
−30
−25/+20
−24
−72
30
2.8
1.6
www.DataSheet.net/
75
−24
150
−55 to 150
V
V
V
A
W
W
W
mJ
A
°C
°C
Note: For Notes 1 to 3, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
1.27 0.4 ± 0.1
8 5 0.05 M A
0.15 ± 0.05
1 4 0.595
A
5.0 ± 0.2
S 0.05 S
14
4.25 ± 0.2
85
1,2,3：SOURCE
4：GATE
5,6,7,8：DRAIN
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.076 g (typ.)
Circuit Configuration
8765
1234
1
2009-12-03
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
RDS (ON) – Ta
20
Common source
Pulse test
16
ID = −6, −12, −24 A
12
VGS = −4.5 V
8
VGS = −10 V
4
ID = −6, −12, −24 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCA8109
−100
−10
−10
IDR – VDS
−4.5
−3
−1
VGS = 0 V
−1
−0.1
0
Common source
Ta = 25°C
Pulse test
0.2 0.4 0.6 0.8 1
1.2
Drain−source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
−0.1
−1
Coss
Crss
−10 −100
Drain−source voltage VDS (V)
Vth – Ta
−2
−1.6
−1.2
www.DataSheet.net/
−0.8
−0.4
Common source
VDS = −10 V
ID = −0.5mA
Pulse test
0
−80 −40
0
40 80
Ambient temperature Ta
120
(°C)
160
Dynamic input/output
characteristics
−30
−25 VDD = −24 V
Common source −30
ID = −24 A
Ta = 25°C
Pulse test
−25
−20 VDS
−20
−15
−12
−10
−6
−5
−6
VDD = −24 V
−12
VGS
−15
−10
−5
00
0 20 40 60 80 100
Total gate charge Qg (nC)
5
2009-12-03
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCA8109.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TPCA8102 | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | Toshiba Semiconductor |
| TPCA8103 | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | Toshiba Semiconductor |
| TPCA8104 | High-Side Switching Applications | Toshiba Semiconductor |
| TPCA8105 | Notebook PC Applications | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |