2N5555 반도체 회로 부품 판매점
CASE 29.04/ STYLE 5 TO-92 (TO-226AA)
|
|
 Motorola Inc |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET Switching
N–Channel — Depletion
3
GATE
1 DRAIN
Order this document
by 2N5555/D
2N5555
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage
Forward Gate Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDS
VDG
VGS
IGF
PD
25 Vdc
25 Vdc
25 Vdc
10 mAdc
350 mW
2.8 mW/°C
Junction Temperature Range
TJ – 65 to +150
Storage Temperature Range
Tstg – 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C
°C
Symbol
OFF CHARACTERISTICS
Gate – Source Breakdown Voltage (IG = 10 µAdc, VDS = 0)
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
Drain Cutoff Current (VDS = 12 Vdc, VGS = – 10 V)
Drain Cutoff Current (VDS = 12 Vdc, VGS = – 10 V, TA = 100°C)
ON CHARACTERISTICS
Zero – Gate –Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
Gate–Source Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)
Drain–Source On–Voltage
(ID = 7.0 mAdc, VGS = 0)
Static Drain–Source On Resistance
(ID = 0.1 mAdc, VGS = 0)
SMALL– SIGNAL CHARACTERISTICS
V(BR)GSS
IGSS
ID(off)
IDSS
VGS(f)
VDS(on)
rDS(on)
Small–Signal Drain–Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
rds(on)
Ciss
Crss
Turn–On Delay Time
Rise Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%.
td(on)
tr
td(off)
tf
1
2
3
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
Min Max Unit
25 — Vdc
— 1.0 nAdc
— 10 nAdc
— 2.0 µAdc
15 — mAdc
— 1.0 Vdc
— 1.5 Vdc
— 150 Ohms
— 150 Ohms
— 5.0 pF
— 1.2 pF
— 5.0 ns
— 5.0 ns
— 15 ns
— 10 ns
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
2N5555
PULSE
GENERATOR
(50 OHMS)
50 OHM COAXIAL CABLE
1.0 k
1.0 k
50
INPUT PULSE
RISE TIME < 1.0 ns
FALL TIME < 1.0 ns
NOMINAL VALUE OF “ON” PULSE WIDTH = 400 ns
DUTY CYCLE ≤ 1.0%
GENERATOR SOURCE IMPEDANCE = 50 OHMS
VDD
50 OHM
COAXIAL
CABLE
10 k
PULSE WIDTH
TEKTRONIX
567
SAMPLING
SCOPE
50%
INPUT 10%
90% 90%
INPUT PULSE
RISE TIME
Rin =
50 OHMS
OUTPUT
td(on)
10%
td(off)
50%
10%
VGS(on)
VGS(off)
INPUT PULSE
FALL TIME
10%
90% 90%
tr tf
Figure 1. Switching Times Test Circuit
POWER GAIN
24
f = 100 MHz
20
16
12 400 MHz
8.0 Tchannel = 25°C
VDS = 15 Vdc
VGS = 0 V
4.0
0 2.0 4.0 6.0 8.0 10 12 14
ID, DRAIN CURRENT (mA)
Figure 2. Effects of Drain Current
INPUT
TO 50 Ω
SOURCE
NEUTRALIZING
COIL
C1
L1
C5
Rg′ L3
C6
C2
VGS
C3
C4
CASE
L2
C7
TO 500 Ω
LOAD
COMMON
VDS
+15 V
ID = 5.0 mA
Adjust VGS for
ID = 50 mA
VGS < 0 Volts
NOTE:
The noise source is a hot–cold body
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
Reference
Designation
C1
C2
C3
C4
C5
C6
C7
L1
L2
L3
VALUE
100 MHz 400 MHz
7.0 pF
1.8 pF
1000 pF
17 pF
3.0 pF
1.0 pF
1–12 pF 0.8–8.0 pF
1–12 pF 0.8–8.0 pF
0.0015 µF 0.001 µF
0.0015 µF 0.001 µF
3.0 µH*
0.2 µH**
0.15 µH* 0.03 µH**
0.14 µH* 0.022 µH**
*L1 17 turns, (approx. — depends upon circuit layout) AWG #28
enameled copper wire, close wound on 9/32″ ceramic coil
form. Tuning provided by a powdered iron slug.
*L2 4–1/2 turns, AWG #18 enameled copper wire, 5/16″ long,
3/8″ I.D. (AIR CORE).
*L3 3–1/2 turns, AWG #18 enameled copper wire, 1/4″ long,
3/8″ I.D. (AIR CORE).
**L1 6 turns, (approx. — depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32″ ceramic coil
form. Tuning provided by an aluminum slug.
**L2 1 turn, AWG #16 enameled copper wire, 3/8″ I.D.
(AIR CORE).
**L3 1/2 turn, AWG #16 enameled copper wire, 1/4″ I.D.
(AIR CORE).
Figure 3. 100 MHz and 400 MHz Neutralized Test Circuit
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
|
PDF 파일 내의 페이지 : 총 8 페이지
제조업체: Motorola Inc
( motorola )
2N5555 data
데이터시트 다운로드 :
[ 2N5555.PDF ]
[ 2N5555 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
2N5550
mplifier Transistors(NPN Silicon) - ON Semiconductor
2N5550
NPN high-voltage transistors - NXP Semiconductors
2N5550
NPN EPITAXIAL SILICON TRANSISTOR - Samsung semiconductor
2N5550
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications - Semtech Corporation
2N5550
NPN EPITAXIAL SILICON TRANSISTOR - Fairchild Semiconductor
2N5550
Amplifier Transistors - Motorola Semiconductors
2N5550
COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS - Micro Electronics
2N5550
EPITAXIAL PLANAR NPN TRANSISTOR - KEC
2N5550
(2N5550 / 2N5551) NPN high-voltage transistors - Philips