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PDF SL2ICS2001V1D Data sheet ( Hoja de datos )

Número de pieza SL2ICS2001V1D
Descripción I-CODE SLI Label IC bumped wafer specification on UV-tape
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SL2ICS2001DW/V1D
I-CODE SLI Label IC bumped wafer specification on UV-tape
Rev. 3.0 — 5 February 2008
150030
Product data sheet addendum
PUBLIC
1. General description
This specification describes the electrical, physical and dimensional properties of
Au-bumped sawn wafers on FFC with UV-tape of I-CODE SLI Label ICs on an NXP
C075EE process and is the base for delivery of tested I-CODE SLI Label ICs.
2. Ordering information
Table 1. Ordering information
Type number
Package
Name
SL2ICS2001DW/V1D
-
Description
Bumped die on sawn wafer on UV-tape
3. Mechanical specification
Odering code
9352 795 61005
3.1 Wafer
Diameter:
Thickness:
3.2 Wafer backside
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Material:
Treatment:
Roughness:
3.3 Chip dimensions
Chip size:
Scribe lines:
3.4 Passivation
Type:
Material:
Thickness:
8”
150 μm ± 15 μm
Si
ground and stress release
Ra max. 0.5 μm
Rt max. 5 μm
900 x 780 μm2
80 / 80 μm
sandwich structure
PSG / Nitride (on top)
500 nm / 600 nm

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SL2ICS2001V1D pdf
NXP Semiconductors
6. Characteristics
SL2ICS2001DW/V1D
I-CODE SLI Label IC bumped wafer specification on UV-tape
PUBLIC
6.1 Electrical characteristics
Table 3. Characteristics [1]
Symbol
Parameter
Conditions
Tjop = -25 to 85°C
VLA-LB
Minimum supply voltage for
READ/WRITE/EAS
fop Operating frequency
Cres Input capacitance between VLA-LB = 2 Vrms
LA – LB
Pmin Minimum operating supply
power
m
Modulation of RF voltage for
demodulator response
m = V-V---m-m---aa---xx---+-----VV----mm----ii-n-n
tP sm
tD
Rmod
tret
nwrite
Modulation pulse length of
RF voltage
Demodulator response time m 10 %, 100 %
Load modulation
EEPROM Data retention
Tamb 55 °C
EEPROM Write endurance
[2]
[3]
[4]
[5]
[5]
[5]
[5]
Min Typ Max Unit
±2.5
13.553
22.3
±2.6
13.560
23.5
±2.9
13.567
24.7
Vrms
MHz
pF
- 280 - μW
---%
- - - μs
- - - μs
---Ω
10 - - Years
100000 - - Cycles
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[1] Typical ratings are not guaranteed. These values listed are at room temperature.
[2] Bandwidth limitation (±7 kHz) according to ISM band regulations.
[3] Measured with an HP4285A LCR meter at 13.56 MHz.
[4] Including losses in resonant capacitor and rectifier.
[5] Refer to ISO/IEC 15693-2 and 15693-3 including pulse shapes and tolerances; proper coil design
assumed.
7. Final wafertest specification
Mininum yield per wafer: 30 % of 35416 potential good dies.
Minimum yield per lot: 30 %
150030
Product data sheet addendum
Rev. 3.0 — 5 February 2008
© NXP B.V. 2008. All rights reserved.
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