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PDF BUK7880-55A Data sheet ( Hoja de datos )
| Número de pieza | BUK7880-55A | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7880-55A
N-channel TrenchMOS standard level FET
Rev. 01 — 1 November 2007
www.datasheet4u.com
1. Product profile
Product data sheet
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP General Purpose Automotive (GPA) TrenchMOS technology.
1.2 Features
I Very low on-state resistance
I 150 °C rated
I Q101 compliant
I Standard level compatible
1.3 Applications
I Automotive systems
I Motors, lamps and solenoids
I General purpose power switching
I 12 V and 24 V loads
1.4 Quick reference data
I EDS(AL)S ≤ 53 mJ
I ID ≤ 7 A
I RDSon = 68 mΩ (typ)
I Ptot ≤ 8 W
2. Pinning information
Table 1. Pinning
Pin Description
1 gate (G)
2 drain (D)
3 source (S)
4 solder point; connected to drain (D)
Simplified outline
4
1 23
sot223_so
SOT223 (SC-73)
Symbol
D
G
mbb076 S
1 page  
NXP Semiconductors
BUK7880-55A
N-channel TrenchMOS standard level FET
6. Characteristics
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Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
IDSS drain leakage current
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
IGSS gate leakage current
VGS = ±20 V; VDS = 0 V
RDSon drain-source on-state resistance VGS = 10 V; ID = 10 A; see Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
Dynamic characteristics
QG(tot) total gate charge
QGS gate-source charge
QGD
gate-drain charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
ID = 10 A; VDD = 44 V; VGS = 10 V;
see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 12
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
IS = 15 A; VGS = 0 V; see Figure 15
IS = 20 A; dIS/dt = −100 A/µs;
VGS = −10 V; VR = 30 V
Min Typ Max Unit
55 - - V
50 - - V
23
1.2 -
--
4V
-V
4.4 V
- 0.05 10 µA
- - 500 µA
- 2 100 nA
- 68 80 mΩ
- - 148 mΩ
- 12 - nC
- 2.5 - nC
- 5 - nC
- 374 500 pF
- 92 110 pF
- 62 85 pF
- 8 - ns
- 52 - ns
- 17 - ns
- 9 - ns
- 0.85 1.2 V
- 33 - ns
- 31 - nC
BUK7880-55A_1
Product data sheet
Rev. 01 — 1 November 2007
© NXP B.V. 2007. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
9. Revision history
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Table 6. Revision history
Document ID
Release date
BUK7880-55A_1
20071101
BUK7880-55A
N-channel TrenchMOS standard level FET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BUK7880-55A_1
Product data sheet
Rev. 01 — 1 November 2007
© NXP B.V. 2007. All rights reserved.
11 of 13
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BUK7880-55A.PDF ] | |
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