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Número de pieza | HN7G06FU | |
Descripción | Power Management Switch Applications | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HN7G06FU (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Multichip Discrete Device
HN7G06FU
HN7G06FU
• Power Management Switch Applications, Inverter
Circuit Applications, Driver Circuit Applications and
Interface Circuit Applications
Unit: mm
• Combining transistor and BRT reduces the parts count, enabling the
design of more compact equipment with a simpler system configuration.
Q1: 2SA1955F equivalent
Q2: RN1104F equivalent
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
VCBO
VCEO
VEBO
IC
IB
Rating
−15
−12
−5
−500
−50
Unit
V
V
V
mA
mA
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
10
100
Q1, Q2 Common Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
V
V
V
mA
Unit
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 0.0068 g (typ.)
Marking
Type Name
hFE Rank
Collector power dissipation
Junction temperature
Storage temperature range
PC* 200 mW
Tj 150 °C
Tstg
−55~150
°C
74A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating. 130 mW per element should not be exceeded.
Equivalent
Circuit
654
Q1 Q2
123
1 2007-11-01
1 page Q1, Q2 common
www.DataSheet4U.com
400
PC* – Ta
300
200
100
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta (°C)
*:Total rating
175
HN7G06FU
5 2007-11-01
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet HN7G06FU.PDF ] |
Número de pieza | Descripción | Fabricantes |
HN7G06FU | Power Management Switch Applications | Toshiba Semiconductor |
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