SM105 반도체 회로 부품 판매점
(SM101 - SM107) CURRENT 1.0 AMPERES VOLTAGE 50 TO 1000 VOLTS
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 DEC |
SM101 THRU SM107
Features
· The plastic package carries Underwrites Laboratory
Flammability Classification 94V-0
· For surface mounted applications
· Glass passivated junction
www.Data·SHheiegt4hUt.ceomm perature soldering guaranteed: 250 /10
seconds, at terminals
CURRENT 1.0 Ampere
VOLTAGE 50 to 1000 Volts
MELF (DO-41)
SOLDERABLE ENDS
0.024(0.60)
0.018(0.46)
Mechanical Data
· Case : JEDEC MELF(DO-41) molded plastic body
· Terminals : Lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.0041 ounce, 0.116 gram
0.205(5.20)
0.190(4.80)
0.105(2.70)
0.095(2.40)
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25 ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols SM101 SM102 SM103 SM104 SM105 SM106 SM107
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length at TA=55
Peak forward surge current 8.3ms half sine
wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25
TA=100
Maximun reverse recovery time (Note 1)
Typical thermal resistance (Note 2)
Operating and storage temperature range
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
trr
R JA
TJ
TSTG
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
1.0
30.0
1.3
50
100
150 250
5.0
-55 to +175
500
Notes:
(1) Reverse recovery time test condition : IF=0.5A, IR=1.0A, IRR=0.25A
(2) Measured at 1MHz and applied reverse voltage of 4.0V DC.
Units
Volts
Volts
Volts
Amp
Amps
Volts
A
ns
/W
RATINGS AND CHARACTERISTIC CURVES SM101 THRU SM107
FIG.1-TYPICAL FORWARDCHARACTERISTICS
50
www.DataSheet4U.1c0om
3.0
1.0
0.1
Tj=25 C
Pulse Width 300us
1% Duty Cycle
.0 1.6 .8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
NONINDUCTIVE
10
NONINDUCTIVE
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GEN ERATO R
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
trr
-1.0A
1cm
SET TIME BASE FOR 50 / 10ns / cm
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6 Single Phase
Half Wave 60Hz
0.4 Resistive Or Inductive Load
0.2
0
0 20 40 60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE (o C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARDSURGE CURRENT
50
40
30
Tj=25oC
8.3ms SingleHalf
20 SineWave
JEDECmethod
10
01
5 10
50 100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
35
30
25
20
15
10
5
0
.01 .05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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