PDF MB84VA2000 Data sheet ( Hoja de datos )

Número de pieza	MB84VA2000
Descripción	(MB84VA2000 / MB84VA2001) 8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM
Fabricantes	Fujitsu Media Devices
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No Preview Available ! FUJITSU SEMICONDUCTOR DATA SHEET DS05-50101-2E MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 8M (× 8) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2000-10/MB84VA2001-10 s FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Minimum 100,000 write/erase cycles • Sector erase architecture One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture MB84VA2000: Top sector MB84VA2001: Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready-Busy output (RY/BY) Hardware method for detection of program or erase cycle completion • Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode. • Low VCC write inhibit ≤ 2.5 V • Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device • Please refer to "MBM29LV800TA/BA" data sheet in detailed function — SRAM • Power dissipation Operating : 35 mA max. Standby : 50 µA max. • Power down features using CE1s and CE2s • Data retention supply voltage: 2.0 V to 3.6 V Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. 1 page MB84VA2000-10/MB84VA2001-10 s FLEXIBLE SECTOR-ERASE ARCHITECTURE on FLASH MEMORY • One 16 K byte, two 8 K bytes, one 32 K byte, and fifteen 64 K bytes. • Individual-sector, multiple-sector, or bulk-erase capability. 16K byte 8K byte 8K byte 32K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte MB84VA2000 Sector Architecture FFFFFH FC000H FA000H F8000H F0000H E0000H D0000H C0000H B0000H A0000H 90000H 80000H 70000H 60000H 50000H 40000H 30000H 20000H 10000H 00000H 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 64K byte 32K byte 8K byte 8K byte 16K byte MB84VA2001 Sector Architecture FFFFFH F0000H E0000H D0000H C0000H B0000H A0000H 90000H 80000H 70000H 60000H 50000H 40000H 30000H 20000H 10000H 08000H 06000H 04000H 00000H 5 5 Page MB84VA2000-10/MB84VA2001-10 s DC CHARACTERISTICS Parameter Symbol Parameter Description Test Conditions Min. ILI Input Leakage Current — –1.0 ILO Output Leakage Current — –1.0 ICC1f Flash VCC Active Current VCCf = VCC Max., CEf = VIL tCYCLE = 10 MHz (Read) OE = VIH tCYCLE = 5 MHz — — ICC2f Flash VCC Active Current (Program/Erase) VCCf = VCC Max., CEf = VIL, OE = VIH — ICC1s SRAM VCC Active Current VCCs = VCC Max., CE1s = VIL, CE2s = VIH ttCYCLE =10 MHz tCYCLE = 1 MHz — — ICC2s SRAM VCC Active Current CE1s = 0.2 V, CE2s = VCCs – 0.2 V, WE = VCCs – 0.2 V tCYCLE = 10 MHz tCYCLE = 1 MHz — — ISB1f Flash VCC Standby Current VCCf = VCC Max., CEf = VCCf ± 0.3 V RESET = VCCf ± 0.3 V — ISB2f Flash VCC Standby Current (RESET) VCCf = VCC Max., RESET = VSS ± 0.3 V — ISB1s SRAM VCC Standby Current CE1s = VIH or CE2s = VIL — VCCs = 3.0 V ±10% TA = 25°C TA = –20 to +85°C — — ISB2s** SRAM VCC Standby Current CE1s = VCC – 0.2 V or CE2s = 0.2 V VCCs = 3.3 V ±0.3 V TA = 25°C TA = –20 to +85°C TA = 25°C — — — VCCs = 3.0 V TA = –20 to +40°C TA = –20 to +85°C — — VIL Input Low Level — –0.3 VIH Input High Level — 2.2 VOL Output Low Voltage Level IOL = 2.1 mA, VCCf = VCCs = VCC Min. — VOH Output High Voltage Level IOH = –500 µA, VCCf = VCCs = VCC Min. VCC – 0.5 VLKO Flash Low VCC Lock-Out Voltage — 2.3 Typ. — — — — — — — — — — — — 1 — 1.5 — 1 — — — — — — — Max. Unit +1.0 +1.0 22 12 µA µA mA 35 mA 40 mA 12 mA 35 mA 6 mA 5 µA 5 µA 2 mA 2.5 µA 55 µA 3 µA 60 µA 2 µA 5 µA 50 µA 0.6 V VCC+0.3* V 0.4 V —V 2.5 V * : VCC indicate lower of VCCf or VCCs ** :During standby mode with CE1s = VCCS – 0.2 V, CE2s should be CE2s < 0.2V or CE2s > VCCS – 0.2V 11 11 Page

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