MP4006 반도체 회로 부품 판매점
Silicon NPN&PNP Epitaxial Type
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 Toshiba |
TOSHIBA Power Transistor Module
Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
MP4006
MP4006
High Power Switching Applications.
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
Industrial Applications
Unit: mm
· Small package by full molding (SIP 10 pin)
· High collector power dissipation (4 devices operation)
: IC (DC) = ±2 A (max)
· High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Continuous base current
Collector power dissipation
(1 device operation)
Collector power dissipation
(4 devices operation)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Rating
NPN PNP
80 −80
80 −80
8 −8
2 −2
3 −3
0.5 −0.5
2.0
4.0
150
−55 to 150
Unit
V
V
V
A
A
W
W
°C
°C
Array Configuration
R1 R2
10
6
7
3
2
8
9
5
4
R1 R2
1
R1 ≈ 4 kΩ R2 ≈ 800 Ω
JEDEC
―
JEITA
―
TOSHIBA
2-25A1B
Weight: 2.1 g (typ.)
1 2002-11-20
Thermal Characteristics
Characteristics
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
Symbol
Max Unit
ΣRth (j-a)
31.3
°C/W
TL 260 °C
MP4006
Electrical Characteristics (Ta = 25°C) (NPN transistor)
Characteristics
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter
Saturation voltage
Base-emitter
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
ICEO
IEBO
V (BR) CBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
Cob
VCB = 80 V, IE = 0 A
VCE = 80 V, IB = 0 A
VEB = 8 V, IC = 0 A
IC = 1 mA, IE = 0 A
IC = 10 mA, IB = 0 A
VCE = 2 V, IC = 1 A
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
VCE = 2 V, IC = 0.5 A
VCB = 10 V, IE = 0 A, f = 1 MHz
Min Typ. Max Unit
― ― 10 µA
― ― 10 µA
0.8 ― 4.0 mA
80 ― ―
V
80 ― ―
V
2000 ― ― ―
― ― 1.5
V
― ― 2.0
― 100 ― MHz
― 20 ― pF
Turn-on time
Switching time Storage time
Fall time
ton
Input IB1
Output ― 0.4 ―
tstg
20 µs
IB2
― 4.0 ― µs
VCC = 30 V
tf
IB1 = −IB2 = 1 mA, duty cycle ≤ 1%
― 0.6 ―
2 2002-11-20
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제조업체: Toshiba
( toshiba )
MP4006 data
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[ MP4006.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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