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Número de pieza | PS21212 | |
Descripción | TRANSFER-MOLD TYPE INSULATED TYPE | |
Fabricantes | Mitsubishi Electric Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PS21212 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PS21212
INTEGRATED POWER FUNCTIONS
600V/5A low-loss 3rd generation IGBT inverter bridge for 3
phase DC-to-AC power conversion (Fig. 2)
Application Motor Ratings : Power : 0.2kW, sinusoidal, PWM
Frequency=15kHz
100% load current : 1.5A (rms)*
150% load current : 2.25A (rms)*,
1 minute.
*(Note) : The motor current is assumed to be sinusoidal and
the peak current value is defined as : lO ! √ 2
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
• For upper-leg IGBTS : Drive circuit, High voltage isolated high-speed level shifting, Control circuit under-voltage (UV) protection.
Note : Bootstrap supply scheme can be applied (Fig. 2).
• For lower-leg IGBTS : Drive circuit, Control curcuit under-voltage protection (UV), Short circuit protection (SC). (Fig. 3)
• Fault signaling : Corresponding to a SC fault (Low-side IGBT) or a UV fault (Low-side supply).
• Input interface : 5V line CMOS/TTL compatible, Schmitt Trigger receiver circuit.
APPLICATION
AC100V~200V three-phase inverter drive for small power (0.2 kW) motor control.
Fig. 1 PACKAGE OUTLINES
2.8
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
2-φ4.5
22 23 24 25
10 10 10
67
79
26
20
3.8
TERMINALS CODE
1. UP
4. VUFS
2. VP1 5. VP
3. VUFB 6. VP1
7. VVFB
8. VVFS
9. WP
10. VP1 13. VWFS 16. CIN 19. UN
11. VPC 14. VN1 17. CFO 20. VN
12. VWFB 15. VNC 18. Fo 21. WN
22. P
23. U
24. V
25. W
26. N
Aug. 1999
1 page MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21212
TRANSFER-MOLD TYPE
INSULATED TYPE
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Mounting torque
Weight
Condition
Mounting screw : M4
Recommended 12kg·cm
Recommended 1.18N·m
Limits
Unit
Min. Typ. Max.
10 — 15 kg·cm
0.98 — 1.47 N·m
— 54 — g
RECOMMENDED OPERATION CONDITIONS
Symbol
Parameter
Condition
VCC Supply voltage
VD Control supply voltage
VDB Control supply voltage
∆VD, ∆VDB Control supply variation
tdead
Arm shoot-through blocking time
fPWM
PWM input frequency
VCIN(ON) Input ON threshold voltage
VCIN(OFF) Input OFF threshold voltage
Applied between P-N
Applied between VP1-VPC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
For each input signal
TC ≤ 100°C, Tj ≤ 125°C
Applied between UP, VP, WP-VPC
Applied between UN, VN, WN-VNC
Limits
Min. Typ. Max.
0 300 400
13.5 15.0 16.5
13.5 15.0 16.5
–1 — 1.0
3 ——
— 15 —
0~0.65
4.0~5.5
Unit
V
V
V
V/µs
µs
kHz
V
V
Fig. 4 THE DIP-IPM INTERNAL CIRCUIT
Aug. 1999
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet PS21212.PDF ] |
Número de pieza | Descripción | Fabricantes |
PS21212 | TRANSFER-MOLD TYPE INSULATED TYPE | Mitsubishi Electric Semiconductor |
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