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PDF SMP30-180 Data sheet ( Hoja de datos )
| Número de pieza | SMP30-180 | |
| Descripción | TRISILTM | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SMP30-180 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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® SMP30-xxx Series
TRISILTM
FEATURES
n BIDIRECTIONAL CROWBAR PROTECTION.
n VOLTAGE RANGE: FROM 62 V TO 270 V.
n HOLDING CURRENT :
IH = 150 mA min.
n REPETITIVE PEAK PULSE CURRENT :
IPP = 30 A, 10/1000 µs.
n JEDEC REGISTERED PACKAGE OUTLINE
DESCRIPTION
The SMP30-xxx series has been designed to
protect telecommunication equipments against
lightning surges and overvoltages induced by AC
power lines.
SMA
(JEDEC DO-214AA)
SCHEMATIC DIAGRAM
COMPLIES WITH THE
FOLLOWING STANDARDS:
Peak Surge
Voltage
(V)
(CCITT) ITU-K20
1000
(CCITT) ITU-K17
1500
VDE0433
2000
VDE0878
2000
IEC-1000-4-5
level 2
level 3
FCC Part 68, lightning surge
type A
1500
800
FCC Part 68, lightning surge
type B
1000
BELLCORE TR-NWT-001089
First level
2500
1000
BELLCORE TR-NWT-001089
Second level
5000
BELLCORE TR-NWT-001089
Intra building lightning
1500
CNET l31-24
1000
Voltage
Waveform
(µs)
10/700
10/700
10/700
1.2/50
10/700
1.2/50
10/160
10/560
9/720
2/10
10/1000
2/10
2/10
0.5/700
Current
Waveform
(µs)
5/310
5/310
5/310
1/20
5/310
8/20
10/160
10/560
5/320
Admissible
Ipp
(A)
25
38
40
50
25
50
65
50
25
Necessary
Resistor
(Ω)
-
-
10
-
-
-
15.5
8.0
-
2/10
10/1000
2/10
125
30
125
15.0
23.3
15.0
2/10 100
-
0.8/310
25
-
January 2000 - Ed: 5B
1/6
1 page  
Fig. 1: Non repetitive surge peak on-sate current
versus overload duration (Tj initial=25°C).
SMP30-xxx Series
Fig. 2: Relative variation of holding current versus
junction temperature.
ITSM(A)
20
15
10
5
0
1E-2
1E-1
1E+0
1E+1
t(s)
F = 50Hz
1E+2
1E+3
IH[Tj] / IH[Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20 0 20
40
Tj(°C)
60
80 100 120
Fig. 3: Relative variation of junction capacitance
versus reverse applied voltage (typical values)
Fig. 4: On-state voltage versus on-state current
(typical values).
C[VR]/C[VR=1V]
1.0
0.5
0.2
0.1
1
10
VR(V)
F = 1MHz
100 300
IT(A)
50
Tj = 25°C
20
10
5
2
1
0 1 2 3 4 5 6 7 8 9 10
VT(V)
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration.
Fig. 6: Relative variation of VBO voltage versus
junction temperature.
Zth(j-a)(°CW)
1E+2
1E+1
1E+0
1E-1
1E-3
1E-2
1E-1 1E+0 1E+1 1E+2 5E+2
tp(s)
Vbo[Tj]/Vbo[Tj=25°C]
1.10
1.05
1.00 270 V
0.95
62 V
0.90
-40 -20 0 20 40 60 80 100
Tj(°C)
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SMP30-180.PDF ] | |
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