(PDF) 2SJ450 Datasheet - Silicon P-Channel MOS FET

Número de pieza	2SJ450
Descripción	Silicon P-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SJ450 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance. • Low drive power • High speed switching • 2.5 V gate drive device. Outline UPAK G 21 3 4 D 1. Gate 2. Drain 3. Source 4. Drain S ADE-208-381 1st. Edition 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage –2.0 Pulse Test –1.6 –1.2 I D = –1.5 A –0.8 –1 A –0.4 –0.5 A 0 –2 –4 –6 –8 –10 Gate to Source Voltage V GS (V) 2SJ450 Static Drain to Source on State Resistance vs. Drain Current 20 10 5 2 VGS = –2.5 V 1 –4 V 0.5 Pulse Test 0.2 –0.1 –0.2 –0.5 –1 –2 –5 Drain Current I D (A) –10 Static Drain to Source on State Resistance vs. Temperature 10 Pulse Test 8 I D = –1.5 A 6 4 V GS = –2.5 V –1.0 A –0.5 A 2 1.5 A 0 –4 V –0.5 A –1.0 A –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 10 3 Tc = –25 °C 1 75 °C 0.3 25 °C 0.1 0.03 0.01 –0.01 –0.03 –0.1 –0.3 Drain Current V DS = –10 V Pulse Test –1 –3 –10 I D (A) 5 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet 2SJ450.PDF ]

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PDF 2SJ450 Data sheet ( Hoja de datos )