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PDF 2SJ353 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ353 | |
| Descripción | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ353
P-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SJ353 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
• Radial taping supported
• Can be directly driven by output of 5-V IC
• Low ON resistance
RDS(on) = 0.68 Ω MAX. @VGS = –4 V, ID = –0.8 A
RDS(on) = 0.37 Ω MAX. @VGS = –10 V, ID = –1.0 A
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
1.2
0.8 ±0.1
0.6 ±0.1
0.6 ±0.1
0.6 ±0.1
1.7 1.7
GD S
0.55 ±0.1
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate
Internal
diode
protection
diode
PIN CONNECTIONS
Source (S) S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW ≤ 10 ms,
Duty cycle ≤ 1 %
RATING
–60
±20/+10
±1.5
±3.0
UNIT
V
V
A
A
1.0
150
–55 to +150
W
˚C
˚C
Document No. D11216EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
© 1996
1 page  
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
2SJ353
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SJ353.PDF ] | |
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| 2SJ353 | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | NEC |
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