PDF BSS123A Data sheet ( Hoja de datos )

Número de pieza	BSS123A
Descripción	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Fabricantes	Zetex Semiconductors
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No Preview Available ! SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold PARTMARKING DETAIL – SAA BSS123A S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Drain-Gate Voltage VDGR 100 V Continuous Drain Current at Tamb=25°C ID 170 mA Pulsed Drain Current IDM 680 mA Gate-Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 360 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 100 V ID=0.25mA, VGS=0V Gate-Source Threshold VGS(th) Voltage 0.5 2.0 V ID=1mA, VDS= VGS Gate-Body Leakage Zero Gate Voltage Drain Current IGSS IDSS 50 nA 500 nA VGS=± 20V, VDS=0V VDS=100V, VGS=0V Static Drain-Source On-State Resistance (1) Forward Transconductance(1)(2) RDS(on) gfs 80 6Ω 10 Ω VGS=10V, ID=170mA VGS=4.5V, ID=170mA mS VDS=25V, ID=100mA Input Capacitance (2) Common Source Output Capacitance (2) Ciss Coss 25 pF 9 pF VDS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss 4 pF Turn-On Delay Time (2)(3) td(on) 10 ns Rise Time (2)(3) tr Turn-Off Delay Time (2)(3) td(off) 10 ns VDD ≈30V, ID=280mA 15 ns Fall Time (2)(3) tf 25 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 1 page

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